JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1108 is suitable for converter of ECM. FEATURES ? Compact package ? High forward transfer admittance 1000 μS TYP. (IDSS = 100 μA) 1600 μS TYP. (IDSS = 200 μA) ? Includes diode and high

文件：218.1 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1109 is suitable for converter of ECM. FEATURES ? Compact package ? High forward transfer admittance 1000 μS TYP. (IDSS = 100 μA) 1600 μS TYP. (IDSS = 200 μA) ? Includes diode and high

文件：178.82 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

N-Channel Junction Field Effect Transistors

■ Features ● VDS (V) = 20V ● ID = 10m A ● High forward transfer admittance 1000 μs TYP. (IDSS = 100 μA) 1600 μs TYP. (IDSS = 200 μA) ● Includes diode and high resistance at G - S

文件：1.0091 Mbytes 頁數(shù)：3 Pages

KEXIN

科信電子

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK1109 is suitable for converter of ECM. FEATURES ? Compact package ? High forward transfer admittance 1000 μS TYP. (IDSS = 100 μA) 1600 μS TYP. (IDSS = 200 μA) ? Includes diode and high resistance at G - S

文件：45.23 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：39.83 Kbytes 頁數(shù)：2 Pages

NEC

瑞薩

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 60V, ID= 50A RDS(ON)

文件：635.43 Kbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

2SK1113

2SK1113

文件：62.9 Kbytes 頁數(shù)：2 Pages

TOSHIBA

東芝

Silicon N-Channel MOS Field Effect Transistor (MOS II.I)

high-speed, high-current switching ○ For switching regulators . Low on-resistance. : RDS (ON)=0.95Ω (typical) High forward transmission admittance. | Y's|=4.0S (Standard) Ipss=300A (max) (VDs=600V) Low leakage current. Easy to handle, enhancement type. : Vth=1.5~3.5V(Vps=10V, Ip=1mA)

文件：65.09 Kbytes 頁數(shù)：2 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

DC?DC Converter and Motor Drive Applications ● Low drain?source ON resistance : RDS (ON) = 3.0 ? (typ.) ● High forward transfer admittance : |Yfs| = 2.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

文件：255.13 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝