TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

Relay Drive, DC?DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) (VGS = ?10 V) ● High forward transfer admittance: |Yfs| = 5.0 S (typ.) ● Low leakage current: IDSS = ?100 μA (max) (VDS = ?60 V) ● Enhancement mode: Vth = ?0.8

文件：253.7 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

P-Channel 4 0 V (D-S) MOSFET

FEATURES ? Compliant to RoHS Directive 2002/95/EC

文件：976.18 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

文件：160.7 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -5 A \nPower Dissipation PD 20 W \nDrain-Source voltage VDSS -60 V ;

Toshiba

東芝

Relay Drive, DC??C Converter and Motor Drive Applications

Relay Drive, DC?DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) (VGS = ?10 V) ● High forward transfer admittance: |Yfs| = 5.0 S (typ.) ● Low leakage current: IDSS = ?100 μA (max) (VDS = ?60 V) ● Enhancement mode: Vth = ?0.8

文件：187.42 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

文件：160.7 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

High Voltage Color Display Horizontal

文件：86.76 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

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