MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 2.5 V drive

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NEC

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絲?。?a target="_blank" title="Marking" href="/h22/marking.html">H22；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit

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Pch Single Power Mosfet -20V -0.4A 1450Mohm Ssp/Sc-70

The 2SJ647 is a Pch Single Power Mosfet -20V -0.4A 1450Mohm Ssp/Sc-70. ? 2.5 V drive available\n? Low on-state resistance RDS(on)1 = 1.45 ? MAX. (VGS = ?4.5 V, ID = ?0.2 A) RDS(on)2 = 1.55 ? MAX. (VGS = ?4.0 V, ID = ?0.2 A) RDS(on)3 = 2.98 ? MAX. (VGS = ?2.5 V, ID = ?0.15 A)\n文檔文檔標(biāo)題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔 2021年4月16日2SJ647 Data Sh;

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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