TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)

Switching Regulator and DC-DC Converter Applications Motor Drive Applications ? 4-V gate drive ? Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) ? High forward transfer admittance: ?Yfs? = 7.7 S (typ.) ? Low leakage current: IDSS = ?100 μA (max) (VDS = ?100 V) ? Enhancement mode: Vt

文件：220.43 Kbytes 頁數(shù)：6 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

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Switching Regulator and DC-DC Converter Applications Motor Drive Applications

文件：185.31 Kbytes 頁數(shù)：6 Pages

TOSHIBA

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Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：188.28 Kbytes 頁數(shù)：6 Pages

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Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：L2-π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID -16 A \nPower Dissipation PD 75 W \nDrain-Source voltage VDSS -100 V ;

Toshiba

東芝

Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：188.28 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Switching Regulator and DC-DC Converter Applications Motor Drive Applications

文件：185.31 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝