| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SJ549 | Silicon P Channel MOS FET High Speed Power Switching Features ? Low on-resistance RDS(on)= 0.11 ?typ. ? Low drive current ? 4 V gete drive devices ? High speed switching 文件：56.25 Kbytes 頁數(shù)：9 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | |
2SJ549 | Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.11 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：97.39 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | |
2SJ549 | Silicon P Channel MOS FET High Speed Power Switching | HITACHI 日立 | HITACHI | |
Silicon P Channel MOS FET High Speed Power Switching Features ? Low on-resistance RDS(on)= 0.11 ?typ. ? Low drive current ? 4 V gete drive devices ? High speed switching 文件：56.25 Kbytes 頁數(shù)：9 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.11 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：97.39 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.11 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：97.39 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.11 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：97.39 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET High Speed Power Switching Features ? Low on-resistance RDS(on)= 0.11 ?typ. ? Low drive current ? 4 V gete drive devices ? High speed switching 文件：56.25 Kbytes 頁數(shù)：9 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.11 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：97.39 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET 文件：116.92 Kbytes 頁數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS |
技術(shù)參數(shù)
- 封裝類型：
LDPAK(L)/TO-262
- Nch/Pch：
Pch
- 通道數(shù)：
Single
- VDSS (V) 最大值：
-60
- ID (A)：
-12
- RDS (ON)(mΩ) 最大值@4V或4.5V：
230
- RDS (ON)(mΩ) 最大值@10V或8V：
150
- Ciss (pF) 典型值：
580
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
50
- 應(yīng)用：
Industrial
- 安裝類型：
Through Hole
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HIT |
24+ |
TO-251 |
20000 |
詢價 | |||
日立 |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
HITACHI/日立 |
23+ |
TO-220 |
36688 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
日立 |
25+ |
TO-TO-220 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
RENESAS |
20+ |
TO-263 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NEC |
26+ |
原廠原封裝 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
RENESAS |
17+ |
TO-263 |
1000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
RENESAS/瑞薩 |
22+ |
TO-263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
RENESAS |
2023+ |
TO-263 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價 |
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