| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SJ527 | Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features ? Low on-resistance RDS(on)= 0.3 ?typ. ? Low drive current ? 4 V gete drive devices ? High speed switching 文件：54.17 Kbytes 頁數(shù)：9 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | |
2SJ527 | Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.3 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：93.96 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | |
2SJ527 | Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching ?? Low on-resistance\n?? RDS(on)= 0.3 ?typ.\n?? Low drive current\n?? 4 V gete drive devices\n?? High speed switching; | HITACHI 日立 | HITACHI | |
Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.3 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：93.96 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features ? Low on-resistance RDS(on)= 0.3 ?typ. ? Low drive current ? 4 V gete drive devices ? High speed switching 文件：54.17 Kbytes 頁數(shù)：9 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.3 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：93.96 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features ? Low on-resistance RDS(on)= 0.3 ?typ. ? Low drive current ? 4 V gete drive devices ? High speed switching 文件：54.17 Kbytes 頁數(shù)：9 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.3 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：93.96 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Hight Speed Power Switching Hight Speed Power Switching Features Low on-resistance RDS(on)=0.3 typ. Low drive current High speed switching 4V gate drive devices. 文件：45.39 Kbytes 頁數(shù)：1 Pages | KEXIN 科信電子 | KEXIN | ||
Silicon P Channel MOS FET Description High speed power switching Features ? Low on-resistance RDS (on)= 0.3 ?typ. ? Low drive current ? 4 V gate drive devices ? High speed switching 文件：93.96 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS |
技術(shù)參數(shù)
- 封裝類型：
DPAK(L)-(1)/TO-251
- Nch/Pch：
Pch
- 通道數(shù)：
Single
- VDSS (V) 最大值：
-60
- ID (A)：
-5
- RDS (ON)(mΩ) 最大值@4V或4.5V：
800
- RDS (ON)(mΩ) 最大值@10V或8V：
400
- Ciss (pF) 典型值：
220
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
20
- 應(yīng)用：
Industrial
- 安裝類型：
Through Hole
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SANYO |
24+ |
TO-252 |
6580 |
原裝現(xiàn)貨! |
詢價 | ||
RENESAS瑞薩/HITACHI日立 |
24+ |
TO-252 |
8658 |
新進庫存/原裝 |
詢價 | ||
RENESAS |
23+ |
TO-252 |
30000 |
原裝正品,假一罰十 |
詢價 | ||
HITACHI |
24+ |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | |||
恩XP |
24+ |
SOT-23 |
10000 |
專做原裝現(xiàn)貨 假一賠百ai |
詢價 | ||
RENESAS/瑞薩 |
23+ |
TO-251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
HITACHI |
22+ |
TO-251DPAK(L) |
6000 |
十年配單,只做原裝 |
詢價 | ||
HITACHI/日立 |
07+ |
TO-251 |
400 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
HITACHI |
2023+環(huán)保現(xiàn)貨 |
TO-252 |
18000 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價 | ||
HITACHI |
23+ |
2800 |
正品原裝貨價格低 |
詢價 |
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