Silicon P-Channel MOS FET

Features ? Low on-resistance ? High speed switching ? Low drive current ? 4 V gate drive device can be driven from 5 V source ? Suitable for switching regulator, DC-DC converter Application High speed power switching Features ? Low on-resistance ? High speed switc

文件：47.15 Kbytes 頁數(shù)：9 Pages

HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features ? Low on-resistance ? High speed switching ? Low drive current ? 4 V gate drive device can be driven from 5 V source ? Suitable for switching regulator, DC-DC converter

文件：82.87 Kbytes 頁數(shù)：7 Pages

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P-Channel 100 V (D-S) MOSFET

文件：1.61947 Mbytes 頁數(shù)：7 Pages

VBSEMI

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Silicon P-Channel MOS FET

Description\nHigh speed power switching ? Low on-resistance\n? High speed switching\n? Low drive current\n? 4 V gate drive device can be driven from 5 V source\n? Suitable for switching regulator, DC-DC converter;

Renesas

瑞薩

Silicon P Channel MOS FET

Description High speed power switching Features ? Low on-resistance ? High speed switching ? Low drive current ? 4 V gate drive device can be driven from 5 V source ? Suitable for switching regulator, DC-DC converter

文件：82.87 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

絲印：PD；Package：SOT-523；P-Channel MOSFET

文件：523.87 Kbytes 頁數(shù)：4 Pages

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