絲印：2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?5 V to +110 V – Survival voltage: ?20 V to +120 V ? Bidirectional operation ? High small signal bandwidth: 1.1 MHz (at all gains) ? Slew rate: 8 V/μs ? Step response settling time to 1: 1 μs ? Excellent CMRR: 166 dB ? Accuracy

文件：2.41169 Mbytes 頁數(shù)：33 Pages

TI

德州儀器

絲?。?strong>2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?5 V to +110 V – Survival voltage: ?20 V to +120 V ? Bidirectional operation ? High small signal bandwidth: 1.1 MHz (at all gains) ? Slew rate: 8 V/μs ? Step response settling time to 1: 1 μs ? Excellent CMRR: 166 dB ? Accuracy

文件：2.4574 Mbytes 頁數(shù)：38 Pages

TI

德州儀器

絲?。?strong>2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?5 V to +110 V – Survival voltage: ?20 V to +120 V ? Bidirectional operation ? High small signal bandwidth: 1.1 MHz (at all gains) ? Slew rate: 8 V/μs ? Step response settling time to 1: 1 μs ? Excellent CMRR: 166 dB ? Accuracy

文件：2.66176 Mbytes 頁數(shù)：43 Pages

TI

德州儀器

絲?。?strong>2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?5 V to +110 V – Survival voltage: ?20 V to +120 V ? Bidirectional operation ? High small signal bandwidth: 1.1 MHz (at all gains) ? Slew rate: 8 V/μs ? Step response settling time to 1%: 1 μs ? Excellent CMRR: 166 dB ? Acc

文件：2.66187 Mbytes 頁數(shù)：43 Pages

TI

德州儀器

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：656.76 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：651.81 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

* 4 V gate drive * Low drain?source ON resistance : RDS (ON)= 80 m?(typ.) * High forward transfer admittance : |Yfs| = 8.0 S (typ.) * Low leakage current : IDSS= ?100 μA (max) (VDS= ?60 V) * Enhancement?mode : Vth= ?0.8~?2.0 V (VDS= ?10 V, ID= ?1mA)

文件：280.59 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG APPLICATIONS)

High Speed Switching Applications Analog Applications ? High input impedance ? Low gate threshold voltage.: Vth = ?0.5 to ?1.5 V ? Excellent switching times.: ton = 0.06 μs (typ.) toff = 0.15 μs (typ.) ? Low drain-source ON resistance: RDS (ON) = 2.4 ? (typ.) ? Small package. ? Complementar

文件：194.41 Kbytes 頁數(shù)：3 Pages

TOSHIBA

東芝

P-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：484.4 Kbytes 頁數(shù)：9 Pages

VBSEMI

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