P-CHANNEL MOSFET FOR SWITCHING

Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ● Directly driven by a 4.5 V power source. ● Low on-state resistance RDS(on)1 = 2.7 ? MAX. (VGS = -10 V, ID = -100 mA)

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P-CHANNEL MOSFET FOR SWITCHING

Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ● Directly driven by a 4.5 V power source. ● Low on-state resistance RDS(on)1 = 2.7 ? MAX. (VGS = -10 V, ID = -100 mA)

文件：162.68 Kbytes 頁數(shù)：8 Pages

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P-CHANNEL MOSFET FOR SWITCHING

Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ● Directly driven by a 4.5 V power source. ● Low on-state resistance RDS(on)1 = 2.7 ? MAX. (VGS = -10 V, ID = -100 mA)

文件：162.68 Kbytes 頁數(shù)：8 Pages

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Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4. 5 V power source. ? Directly driven by a 4.5 V power source.\n? Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = -4.5 V, ID = -50 mA);

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