MOS FIELD EFFECT TRANSISTOR

Features ● Directly driven by ICs having a 3V poer supply. ● Not necessary to consider driving current thanks to hight input impedance. ● Possible to reduce the number of parts by omitting the bias resisor.

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NEC

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絲印：H14；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ203 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. The 2SJ203 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR, cameras and headphone stereos whi

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RENESAS

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MOS Fied Effect Transistor

■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON)

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KEXIN

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Power MOSFETs-Power MOSFETs for Automotive

Renesas

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P-Channel MOSFET

■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON)

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KEXIN

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P-Channel 60 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? High-Side Switching ? Low On-Resistance: 3 ? ? Low Threshold: - 2 V (typ.) ? Fast Swtiching Speed: 20 ns (typ.) ? Low Input Capacitance: 20 pF (typ.) ? Compliant to RoHS Directive 2002/95/EC

文件：980.36 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體

P-Channel 60 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? High-Side Switching ? Low On-Resistance: 3 ? ? Low Threshold: - 2 V (typ.) ? Fast Swtiching Speed: 20 ns (typ.) ? Low Input Capacitance: 20 pF (typ.) ? Compliant to RoHS Directive 2002/95/EC

文件：981.3 Kbytes 頁數(shù)：7 Pages

VBSEMI

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P-Channel MOSFET

文件：1.33322 Mbytes 頁數(shù)：3 Pages

KEXIN

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