NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD999 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

文件：222.64 Kbytes 頁(yè)數(shù)：4 Pages

NEC

瑞薩

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

文件：351.15 Kbytes 頁(yè)數(shù)：6 Pages

RENESAS

瑞薩

NPN Silicon Epitaxial Transistor

FEATURES ● Low Collector Saturation Voltage: VCE(sat)

文件：488.86 Kbytes 頁(yè)數(shù)：5 Pages

BILIN

銀河微電

TRANSISTOR(NPN)

FEATURES ● Low Collector-Emitter Saturation Voltage ● Mini Power Type Package ● Excellent DC Current Gain Linearity

文件：343.46 Kbytes 頁(yè)數(shù)：1 Pages

HTSEMI

金譽(yù)半導(dǎo)體

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector-Emitter Saturation Voltage ● Mini Power Type Package ● Excellent DC Current Gain Linearity

文件：1.19082 Mbytes 頁(yè)數(shù)：3 Pages

JIANGSU

長(zhǎng)電科技

NPN Silicon Epitaxial Transistor

Features ● World standard miniature package:SOT-89. ● Low collector saturation voltage. ● Excellent dc current gain linearity.

文件：51.25 Kbytes 頁(yè)數(shù)：1 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/cm/marking.html">CM；Package：SOT-89；NPN Silicon Epitaxial Transistor

FEATURES Low Collector Saturation Voltage: VCE(sat)

文件：814.42 Kbytes 頁(yè)數(shù)：5 Pages

DGNJDZ

南晶電子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：188.03 Kbytes 頁(yè)數(shù)：2 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low VCE(sat), excellent hFE linearity, complements the 2SB798. Applications Audio frequency power amplifier applications.

文件：1.26575 Mbytes 頁(yè)數(shù)：6 Pages

FOSHAN

藍(lán)箭電子

普通三極管

FOSAN

富信半導(dǎo)體