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          首頁 >2SD60>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SD601A

          Silicon NPN epitaxial planer type

          Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features ? High foward current transfer ratio hFE ? Low collector to emitter saturation voltage VCE(sat) ? Mini type package, allowing downsizing of the equipment and automatic insertion through

          文件:38.77 Kbytes 頁數(shù):2 Pages

          PANASONIC

          松下

          2SD601A

          Silicon PNP epitaxial planer type

          For general amplification Complementary to 2SB0709A (2SB709A) ■ Features ? High foward current transfer ratio hFE ? Low collector to emitter saturation voltage VCE(sat) ? Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

          文件:48.65 Kbytes 頁數(shù):3 Pages

          PANASONIC

          松下

          2SD601A

          Si NPN DIFFUSED JUNCTION MESA

          2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

          文件:208.72 Kbytes 頁數(shù):5 Pages

          PANASONIC

          松下

          2SD601A

          Silicon Epitaxial Planar Transistor

          FEATURES z Mini type package. z Complementary to 2SB709A PNP Transistor. z Low collector to emitter saturation voltage VCE(sat). z High forward current transfer ratio hFE. APPLICATIONS z General purpose amplifier applications.

          文件:173.19 Kbytes 頁數(shù):4 Pages

          BILIN

          銀河微電

          2SD601A

          Silicon NPN Power Transistor

          DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.3V(Max) @IC=0.1A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

          文件:309.54 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SD601A

          NPN Plastic-Encapsulate Transistor

          FEATURES Power dissipation PCM: 0.2 W (TAMB=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ,TSTG: -55℃to +150℃

          文件:174.87 Kbytes 頁數(shù):1 Pages

          SECOS

          喜可士

          2SD601A

          SOT-23 Plastic-Encapsulate Transistors

          FEATURE High hFE Low VCE(sat) For general amplification Complementary to 2SB709A

          文件:1.6048 Mbytes 頁數(shù):4 Pages

          DGNJDZ

          南晶電子

          2SD601AQ

          Si NPN DIFFUSED JUNCTION MESA

          2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

          文件:208.72 Kbytes 頁數(shù):5 Pages

          PANASONIC

          松下

          2SD601AR

          Si NPN DIFFUSED JUNCTION MESA

          2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

          文件:208.72 Kbytes 頁數(shù):5 Pages

          PANASONIC

          松下

          2SD601AS

          Si NPN DIFFUSED JUNCTION MESA

          2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

          文件:208.72 Kbytes 頁數(shù):5 Pages

          PANASONIC

          松下

          晶體管資料

          • 型號:

            2SD600K

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            120V

          • 最大電流允許值:

            1A

          • 最大工作頻率:

            130MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            2SC2690,2SC2690A,2SD1382,2SD1563,2SD1684,

          • 最大耗散功率:

            8W

          • 放大倍數(shù):

          • 圖片代號:

            A-21

          • vtest:

            120

          • htest:

            130000000

          • atest:

            1

          • wtest:

            8

          詳細(xì)參數(shù)

          • 型號:

            2SD60

          • 制造商:

            SANYO

          • 制造商全稱:

            Sanyo Semicon Device

          • 功能描述:

            100V/120V, 1A Low-Frequency Power Amp Applications

          供應(yīng)商型號品牌批號封裝庫存備注價格
          SAY
          16+
          T0-126
          10000
          全新原裝現(xiàn)貨
          詢價
          ISC
          20+
          TO-126
          15800
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          24+
          TO-126
          6430
          原裝現(xiàn)貨/歡迎來電咨詢
          詢價
          NEC
          23+
          TO-126
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          NEC
          2022+
          TO-126
          22428
          原廠代理 終端免費提供樣品
          詢價
          NEC
          23+
          TO-126
          920001
          原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
          詢價
          SANYO/國產(chǎn)
          07+
          TO126
          3091
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          SANYO
          23+
          TO-126
          4000
          正品原裝貨價格低
          詢價
          SANYO/國產(chǎn)
          23+
          TO126
          3091
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          SANYO/國產(chǎn)
          22+
          TO126
          20000
          公司只有原裝 品質(zhì)保證
          詢價
          更多2SD60供應(yīng)商 更新時間2026-1-19 10:04:00
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