AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS

FEATURES ? Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) ? High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

文件：46.51 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) · High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

文件：204.4 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

isc Silicon NPN Power Transistor

DESCRIPTION ? High Collector Current-IC= 5A ? Low Saturation Voltage - : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA ? High DC Current Gain- : hFE= 150~600@ IC= 1A APPLICATIONS ? Designed for audio frequency amplifier and switching applications.

文件：56.81 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High DC Current Gain

文件：1.05617 Mbytes 頁數(shù)：3 Pages

JIANGSU

長電科技

絲印：D2583；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

Features Low Vce High DC Current Gain

文件：1.40993 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 5 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.18 Kbytes 頁數(shù)：1 Pages

WINNERJOIN

永而佳

NPN Silicon Epitaxial Power Transistor

FEATURES ? Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) ? High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

文件：304.8 Kbytes 頁數(shù)：5 Pages

THINKISEMI

思祁半導體

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low saturation voltage, high DC current gain. Applications Audio frequency amplifier and switching applications.

文件：827.09 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 5 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：56.06 Kbytes 頁數(shù)：1 Pages

TEL

Medium Power Transistor

Secos

喜可士