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首頁 >2SD21>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
2SD2136-P	文件：258.62 Kbytes Page：2 Pages	NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current 文件：258.62 Kbytes 頁數(shù)：2 Pages	SECOS 喜可士	SECOS
2SD2136-Q	文件：258.62 Kbytes Page：2 Pages	NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current 文件：258.62 Kbytes 頁數(shù)：2 Pages	SECOS 喜可士	SECOS
2SD2136-R	文件：258.62 Kbytes Page：2 Pages	NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current 文件：258.62 Kbytes 頁數(shù)：2 Pages	SECOS 喜可士	SECOS
2SD2136-TU	文件：1.30854 Mbytes Page：4 Pages	絲?。?a target="_blank" title="Marking" href="/d2136/marking.html">D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 文件：1.30854 Mbytes 頁數(shù)：4 Pages	DGNJDZ 南晶電子	DGNJDZ
2SD2137	文件：1.025079 Mbytes Page：3 Pages	絲?。?a target="_blank" title="Marking" href="/2sd2137/marking.html">2SD2137；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors FEATURES High Forward Current Transfer Ratio hFE which Has Satisfactory Linearity Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 文件：1.025079 Mbytes 頁數(shù)：3 Pages	DGNJDZ 南晶電子	DGNJDZ
2SD2137	文件：54.7 Kbytes Page：3 Pages	Silicon NPN triple diffusion planar type(For power amplification) Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r 文件：54.7 Kbytes 頁數(shù)：3 Pages	PANASONIC 松下	PANASONIC
2SD2137	文件：55.11 Kbytes Page：3 Pages	Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping 文件：55.11 Kbytes 頁數(shù)：3 Pages	PANASONIC 松下	PANASONIC
2SD2137A	文件：323.74 Kbytes Page：2 Pages	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO: 80 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 1.2V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications 文件：323.74 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
2SD2137A	文件：55.11 Kbytes Page：3 Pages	Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping 文件：55.11 Kbytes 頁數(shù)：3 Pages	PANASONIC 松下	PANASONIC
2SD2137A	文件：54.7 Kbytes Page：3 Pages	Silicon NPN triple diffusion planar type(For power amplification) Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r 文件：54.7 Kbytes 頁數(shù)：3 Pages	PANASONIC 松下	PANASONIC

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晶體管資料

型號(hào)：
2SD2163
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-N+Darl+Di
性質(zhì)：
低頻或音頻放大（LF）_開關(guān)管（S）_功率放大（L
封裝形式：
直插封裝
極限工作電壓：
150V
最大電流允許值：
10A
最大工作頻率：
<1MHZ或未知
引腳數(shù)：
3
可代換的型號(hào)：
2SD1591,2SD1830,2SD2105,
最大耗散功率：
30W
放大倍數(shù)：
β=6000
圖片代號(hào)：
B-38
vtest：
150
htest：
999900
atest：
10
wtest：
30

技術(shù)參數(shù)

NPN/PNP：
NPN
Vcbo (V)：
150
VCEO (V)：
100
Vebo (V)：
8
Automotive：
YES
IC (A) @25 °C：
10
VCE(sat) (V) max.：
1.5
hFE min.：
1000
hFE max.：
30000
Pc (W)：
30
Package Type：
MP-45F
Production Status：
EOL

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市信佳源電子有限公司	2SD2163	NA	NA	NA	7788	原裝現(xiàn)貨/一站式配單配套	詢價(jià)
深圳市河鋒鑫科技有限公司	2SD2163	NEC	17+	TO-220	31518	原裝正品可含稅交易	詢價(jià)
深圳市一線半導(dǎo)體有限公司	2SD2163	PANASONIC	24+		60000		詢價(jià)
深圳市豪邁興電子有限公司	2SD2163	NEC	24+		4326	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!	詢價(jià)
深圳市億智騰科技有限公司	2SD2163	NEC	24+		6540	原裝現(xiàn)貨/歡迎來電咨詢	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	2SD2163	NEC	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	2SD2163		23+	TO	20000	正品原裝貨價(jià)格低	詢價(jià)
深圳市宏捷佳電子科技有限公司	2SD2163	KEC	25+	TO-TO-220F	12300	獨(dú)立分銷商公司只做原裝誠心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市博中泰實(shí)業(yè)有限公司	2SD2163	NEC	24+	TO-220F	60000	全新原裝現(xiàn)貨	詢價(jià)
深圳市芯澤盛世科技有限公司	2SD2164	NEC	25+	TO-220F	8880	原裝認(rèn)準(zhǔn)芯澤盛世！	詢價(jià)

更多2SD21供應(yīng)商更新時(shí)間2020-4-2 17:49:00

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