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          首頁
                >2SD176>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          2SD1761
          Epitaxial Planar PNP Silicon Transistor
          
@ Features
1) Large collector power dissipation:
Po=30W (Te=25°C)
2) Wide ASO.
3) Complementary pair with 25D1761.
4) Easily insulated from the heat dis-
sipation plate as the fin is molded.
          文件：279.59 Kbytes 頁數(shù)：3 Pages
          ROHM
          羅姆
          

          2SD1761
          TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR
          
Low Feq. Power Amp.
Triple Diffused Planar NPN Silicon Transistor
Features
1) Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
2) Excellent current characteristics of DC current gain.
3) Large collector power dissipation: PC=30W(TC=25℃)
4) Complementary pair with 2SB1187

          文件：63.79 Kbytes 頁數(shù)：1 Pages
          ROHM
          羅姆
          

          2SD1761
          Silicon NPN Power Transistors
          
DESCRIPTION
? With TO-220Fa package
? Low collector saturation voltage
? Complement to type 2SB1187
? Wide safe operating area 
APPLICATIONS
? For low frequency power amplifier applications
          文件：80.16 Kbytes 頁數(shù)：3 Pages
          ISC
          無錫固電
          

          2SD1761
          TO-220F Plastic-Encapsulate Transistors
          
TRANSISTOR (NPN)
FEATURES
? Low Collector Saturation Voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
? Excellent Current Characteristics of DC Current Gain.
? Large Collector Power Dissipation: PC=30W(TC=25℃)
? Complementary Pair with 2SB1187
          文件：1.74428 Mbytes 頁數(shù)：3 Pages
          JIANGSU
          長電科技
          

          2SD1761
          Silicon NPN Power Transistors
          
DESCRIPTION
? With TO-220Fa package
? Low collector saturation voltage
? Complement to type 2SB1187
? Wide safe operating area 
APPLICATIONS
? For low frequency power amplifier applications
          文件：111.16 Kbytes 頁數(shù)：3 Pages
          SAVANTIC
          

          2SD1762
          Silicon NPN Power Transistors
          
DESCRIPTION

·With TO-220Fa package

·Low collector saturation voltage

·Complement to type 2SB1185


APPLICATIONS

·For low frequency power amplifier applications
          文件：110.91 Kbytes 頁數(shù)：3 Pages
          SAVANTIC
          

          2SD1762
          絲?。?a target="_blank" title="Marking" href="/2sd1762/marking.html">2SD1762；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors
          
FEATURES
Low VCE(sat)
Complements the 2SB1185
          文件：1.3627 Mbytes 頁數(shù)：4 Pages
          DGNJDZ
          南晶電子
          

          2SD1762
          Silicon NPN Power Transistors
          
DESCRIPTION

·With TO-220Fa package

·Low collector saturation voltage

·Complement to type 2SB1185


APPLICATIONS

·For low frequency power amplifier applications
          文件：136.3 Kbytes 頁數(shù)：3 Pages
          ISC
          無錫固電
          

          2SD1762
          Power Transistor (50V, 3A)
          
 Power Transistor (50V, 3A)


Features

1) Low VCE(sat),

   VCE(sat) = 0.5V (Typ.)

   (IC/IB = 2A/0.2A)

2) Complements the

   2SB1184 / 2SB1243 / 2SB1185.


Structure

Epitaxial planar type NPN silicon transistor
          文件：153.28 Kbytes 頁數(shù)：4 Pages
          ROHM
          羅姆
          

          2SD1762
          TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
          
Epitaxial Planar NPN Silicon Transistor
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)
          文件：91.07 Kbytes 頁數(shù)：1 Pages
          ROHM
          羅姆
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Product Polarity：
            ?NPN
          • SMD/ThroHole：
            ?SMD
          • VCEO (V)：
            ?32
          • VCBO (V)：
            ?40
          • VEBO (V)：
            ?5.0
          • IC (A)：
            ?1.0
          • PC (W)：
            ?0.5
          • HFE：
            ?82-180
          • @IC (mA)：
            ?500
          • @VCE (V)：
            ?3.0
          • ICBO：
            ?1.0 μA
          • IEBO：
            ?1.0 μA
          • VCE(sat) (V)：
            ?0.8
          • VBE(sat) (V)：
            ?
          • FT (MHz)：
            ?100
          • Package Qty：
            ?Tape
          • FIT：
            ?48; Tj=100℃
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
          



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