| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc Silicon NPN Darlington Power Transistor DESCRIPTION ? High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ? Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ? Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A APPLICATIONS ? Designed for general purpose amplifier and low speed switching applications. 文件:188.96 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
Silicon NPN epitaxial planer type darlington(For low-frequency output amplification) Silicon NPN epitaxial planar type darlington For low-frequency output amplification ■ Features ? Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. ? A shunt resistor is omitted from the driver. ? 文件:52.6 Kbytes 頁數(shù):2 Pages | PANASONIC 松下 | PANASONIC | ||
Driver and output stages of audio frequency amplifiers SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N 文件:149.23 Kbytes 頁數(shù):2 Pages | NEC 瑞薩 | NEC | ||
絲?。?a target="_blank" title="Marking" href="/d1513/marking.html">D1513;Package:TO-92;TO-92 Plastic-Encapsulate Transistors FEATURES Low Collector Saturation High DC Current Gain Complementary to The 2SB1068 PNP Transistor 文件:1.46179 Mbytes 頁數(shù):4 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
絲?。?a target="_blank" title="Marking" href="/d1513/marking.html">D1513;Package:TO-92;TO-92 Plastic-Encapsulate Transistors FEATURES Low Collector Saturation High DC Current Gain Complementary to The 2SB1068 PNP Transistor 文件:1.46179 Mbytes 頁數(shù):4 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
isc Silicon NPN Power Transistor DESCRIPTION ? Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ? Good Linearity of hFE ? High Speed Switching APPLICATIONS ? Designed for power amplifier,power switching applications. 文件:254.36 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
isc Silicon NPN Power Transistor DESCRIPTION ? High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ? High Switching Speed APPLICATIONS ? Switching regulator and high voltage switching applications. 文件:245.27 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
MEDIUM SPEED POWER AMPLIFIER SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER 文件:373.66 Kbytes 頁數(shù):2 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
MEDIUM SPEED POWER AMPLIFIER SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER 文件:373.66 Kbytes 頁數(shù):2 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
MEDIUM SPEED POWER AMPLIFIER SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER 文件:373.66 Kbytes 頁數(shù):2 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI |
技術(shù)參數(shù)
- Vcbo (V):
60
- VCEO (V):
60
- Vebo (V):
7
- IC @25 °C (A):
3
- VCE (sat) (V):
0.5
- hFE:
800-3200
- Pc (W):
10
- fT (Typical) (GHz):
0.12
- Cob (Typical) (pF):
20
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NK南科功率 |
2025+ |
TO-252 |
12138 |
國產(chǎn)南科平替供應(yīng)大量 |
詢價 | ||
NEC |
24+ |
4231 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | |||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
RENESAS |
25+ |
TO-252 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
NEC |
24+ |
TO-252 |
6900 |
新進庫存/原裝 |
詢價 | ||
NEC |
00+ |
TO-252 |
2200 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
NEC |
2016+ |
SOT-252 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
RenesasElectronics |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
NEC |
17+ |
T0-252 |
9988 |
原裝正品QQ547425301電話17621633780楊小姐 |
詢價 | ||
NEC |
2002 |
TO252 |
72 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 |
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