SI NPN DIFFUSED JUNCTION MESA DARLINGTON

2SD1044 -> Si NPN Diffused junction Mesa Darlington 2SD1091 -> Si NPN Triple Diffused Planar Darlington 2SD1105 -> Si NPN Diffused junction Mesa

文件：258.54 Kbytes 頁數(shù)：6 Pages

PANASONIC

松下

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ? High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ? High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ? Wide Area of Safe Operation APPLICATIONS ? Designed for high power amplifier applications.

文件：248.62 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Silicon NPN Power Transistors

· DESCRIPTION ·With TO-3PN package ·Complement to type 2SB816 ·Wide area of safe operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications

文件：215.14 Kbytes 頁數(shù)：4 Pages

ISC

無錫固電

For LF Power Amp,50W Output, Large Power Switching

For LF Power Amplifier, 50W Output Large Power Switching Applications Features ? Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). ? Wide ASO because of built-in ballast resistance. ? Goode dependence of fT on current and good H

文件：105.86 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

Silicon NPN Power Transistors

· DESCRIPTION ·With TO-3PN package ·Complement to type 2SB816 ·Wide area of safe operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications

文件：196.77 Kbytes 頁數(shù)：4 Pages

SAVANTIC

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications.

文件：70.65 Kbytes 頁數(shù)：1 Pages

TGS

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SB817

文件：48.78 Kbytes 頁數(shù)：1 Pages

WINGS

永盛電子

絲印：2SD1047；Package：TO-3P；Power supply

Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 °C Ap

文件：190.98 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Silicon NPN transistor in a TO-3P Plastic Package.

Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features For 60W audio frequency amplifier output stage, Complementary to 2SB817. Applications Designed for use in audio frequency amplifier.

文件：1.27404 Mbytes 頁數(shù)：7 Pages

FOSHAN

藍(lán)箭電子

Silicon NPN Power Transistors

DESCRIPTION ? Complement to type 2SB817 ? With TO-3PN package APPLICATIONS ? Power amplification ? Low frequency and audio band

文件：199.38 Kbytes 頁數(shù)：4 Pages

SAVANTIC