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          首頁 >2SD103>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SD103

          isc Silicon NPN Power Transistors

          DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ? High Power Dissipation- : PC= 25W(Max)@TC=25℃ ? Complement to Type 2SB503 APPLICATIONS ? Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.

          文件:301.95 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SD1030

          Silicon NPN epitaxial planer type(For low-frequency amplification)

          ■ Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat). ● High emitter to base voltage VEBO. ● Low noise voltage NV. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazin

          文件:37.12 Kbytes 頁數(shù):2 Pages

          PANASONIC

          松下

          2SD1032

          SI NPN TRIPLE DIFFUSED PLANAR

          AF Power Amplifier Complementary Pair with 2SB812, 2SB812A Features ? Large PC

          文件:216.81 Kbytes 頁數(shù):5 Pages

          PANASONIC

          松下

          2SD1032

          isc Silicon NPN Power Transistor

          DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ? Large Collector Power Dissipation ? Complement to Type 2SB812 APPLICATIONS ? Designed for AF power amplifier applications.

          文件:106.74 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SD1032A

          SI NPN TRIPLE DIFFUSED PLANAR

          AF Power Amplifier Complementary Pair with 2SB812, 2SB812A Features ? Large PC

          文件:216.81 Kbytes 頁數(shù):5 Pages

          PANASONIC

          松下

          2SD1033

          NPN SILICON EPITAXIAL TRANSISTOR MP-3

          DESCRIPTION The 2SD1033 is designed for Color TV Vertical Deflection Output, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage VCEO = 150 V ● Complementary to the 2SB1094.

          文件:201.25 Kbytes 頁數(shù):4 Pages

          NEC

          瑞薩

          2SD1033

          SILICON POWER TRANSISTOR

          NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1033 is designed for Color TV vertical deflection output, especially in Hybrid Integrated Circuits. FEATURES ? High Voltage VCEO = 150 V ? Complement to 2SB768

          文件:612.43 Kbytes 頁數(shù):6 Pages

          RENESAS

          瑞薩

          2SD1033

          isc Silicon NPN Darlington Power Transistor

          DESCRIPTION ·High DC Current Gain ·Excellent safe operating area ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color &B/W TV power supply ·Active power filter ·Industrial use power supply ·General purpose power ampli

          文件:322.25 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SD1033

          Silicon NPN Epitaxial Transistor

          ■ Features ● High voltageVCEO=150V. ● Complimentary to 2SB768

          文件:39.4 Kbytes 頁數(shù):1 Pages

          KEXIN

          科信電子

          2SD1034A

          HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS MOTOR CONTROL APPLICATIONS.

          FEATURES: -High Voltage: VCE (SUS)-450V -Triple Diffused Design. -Darlington Design.

          文件:128.88 Kbytes 頁數(shù):3 Pages

          TOSHIBA

          東芝

          晶體管資料

          • 型號:

            2SD103

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            80V

          • 最大電流允許值:

            3A

          • 最大工作頻率:

            1MHZ

          • 引腳數(shù):

            2

          • 可代換的型號:

            BD241B,BD243B,BD539B,BD579,BDF589,BD937,3DD61C,

          • 最大耗散功率:

            25W

          • 放大倍數(shù):

          • 圖片代號:

            E-8

          • vtest:

            80

          • htest:

            1000000

          • atest:

            3

          • wtest:

            25

          技術(shù)參數(shù)

          • NPN/PNP:

            NPN

          • Vcbo (V):

            200

          • VCEO (V):

            150

          • Vebo (V):

            5

          • IC (A) @25 °C:

            2

          • VCE(sat) (V) max.:

            1

          • hFE min.:

            40

          • hFE max.:

            200

          • Pc (W):

            20

          • fT (MHz) typ.:

            10

          • Package Type:

            MP-3

          • Production Status:

            EOL

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          更多2SD103供應商 更新時間2026-1-19 16:00:00
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