Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features ? High gain bandwidth product: fT = 7.8 GHz typ. ? High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz ? High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm) ? High withstanding to ESD of collector to emit

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High Gain Bandwidth Product

DESCRIPTION ? High Gain Bandwidth Product fT = 7.8 GHz TYP. ? High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS ? Designed for use in UHF ~ VHF wide band amplifier.

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Silicon NPN RF Transistor

DESCRIPTION ? High Gain Bandwidth Product fT = 7.8 GHz TYP. ? High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS ? Designed for use in UHF ~ VHF wide band amplifier.

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

Transistors>Amplifiers/Bipolar

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Trans GP BJT NPN 12V 0.075A 3-Pin MPAK

NJS