NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES ? Low voltage operation ? 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ?S21e?2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

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NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES ? Low voltage operation ? 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ?S21e?2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Bui

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NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE

FEATURES ? Low phase distortion, low voltage operation ? Ideal for OSC applications ? Flat-lead 3-pin thin-type ultra super minimold package

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NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES ? 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor fT = 18 GHz TYP., ?S21e?2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low

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NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES ? Low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., ?S21e?2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ? Built-in 2 transistors (2 × 2SC5800) ? Flat-le

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NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES ? Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., ?S21e?2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ? Built-in 2 transistors (2 ′ 2SC5800) ? 6-pin lead-less mini

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NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES ? Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., ?S21e?2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ? Built-in 2 transistors (2 × 2SC

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NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES ? Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., ?S21e?2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ? Built-in 2 transistors (2 ′ 2SC5800) ?

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NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES ? Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., ?S21e?2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ? Built-in 2 transistors (2 × 2SC

文件：206.48 Kbytes 頁數(shù)：9 Pages

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NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE

FEATURES ? Low phase distortion, low voltage operation ? Ideal for OSC applications ? Flat-lead 3-pin thin-type ultra super minimold package

文件：109.02 Kbytes 頁數(shù)：24 Pages

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