| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter 文件：237.15 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter 文件：256.04 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter 文件：237.15 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications ? High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) ? Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) ? High-speed switching: tf = 120 ns (typ.) 文件：182.2 Kbytes 頁數(shù)：5 Pages | TOSHIBA 東芝 | TOSHIBA | ||
TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications ? High DC current gain: hFE= 400 to 1000 (IC= 0.5 A) ? Low collector-emitter saturation voltage: VCE (sat)= 0.15 V (max) ? High-speed switching: tf= 50 ns (typ.) 文件：159.27 Kbytes 頁數(shù)：5 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/2c/marking.html">2C；Package：PW-Mini；Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications ? High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) ? Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) ? High-speed switching: tf = 90 ns (typ.) 文件：112.88 Kbytes 頁數(shù)：5 Pages | TOSHIBA 東芝 | TOSHIBA | ||
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for High Resolution Display, Color TV ? High voltage: VCBO = 1700 V ? High speed: tf (2) = 0.2 μs (typ.) ? Collector metal (fin) is fully covered with mold resin. 文件：137.65 Kbytes 頁數(shù)：5 Pages | TOSHIBA 東芝 | TOSHIBA |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SANYO |
24+ |
30000 |
詢價 | ||||
NEC |
23+ |
SOT-343 |
33000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
NEC |
2023+ |
SOT-343 |
58000 |
進口原裝,現(xiàn)貨熱賣 |
詢價 | ||
瑞薩 |
25+ |
QFPSOPDIP |
30675 |
專業(yè)代理瑞薩品牌原裝正品 |
詢價 | ||
NEC |
25+23+ |
SOT343 |
37922 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
NEC |
20+ |
SOT343 |
49000 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
NEC |
2447 |
SOT343 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NEC |
21+ |
SOT343 |
3000 |
詢價 | |||
NEC |
24+ |
SOT343 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
RENESAS/瑞薩 |
23+ |
SOT343 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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