Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features ? High gain bandwidth product fT = 28 GHz typ. ? High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz

文件：198.97 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

SILICON EPITAXIAL

Overview 2SC5625 Ultra-compact resin-sealed silicon NPN epitaxy Type transistor, designed and manufactured for high breakdown voltage. Widely used for downsizing of sets and high-density mounting You. Special length ? Ultra-small outer shape enables miniaturization of sets and high-density moun

文件：61.85 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

SMALL-SIGNAL TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SC5625 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.5V max ● Super mini package for easy m

文件：50.9 Kbytes 頁數(shù)：2 Pages

ISAHAYA

諫早電子

TRANSISTOR

[Isahaya] For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type)

文件：100.37 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

TRANSISTOR

DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial type transistor. It is designed for high frequency amplify application. FEATURE ? Super mini package for easy mounting ? High gain band width product APPLICATION Small type machine high frequency a

文件：283.63 Kbytes 頁數(shù)：4 Pages

ISAHAYA

諫早電子

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features ? Super compact package; (1.4 × 0.8 × 0.59mm) ? High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)

文件：69.31 Kbytes 頁數(shù)：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features ? Super compact package; (1.6 × 0.8 × 0.7mm) ? High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, VCE = 1 V)

文件：73.43 Kbytes 頁數(shù)：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier

Features ? High gain bandwidth product fT = 11 GHz typ. ? High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz

文件：75.73 Kbytes 頁數(shù)：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier

Features ? High gain bandwidth product fT = 11 GHz typ. ? High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz

文件：118.05 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For high-frequency amplification and switching ■ Features ? High transition frequency fT ? S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

文件：49.65 Kbytes 頁數(shù)：2 Pages

PANASONIC

松下