NPN Silicon General Purpose Transistor

FEATURES Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA High Current

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NPN Silicon General Purpose Transistor

FEATURES\nLow VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA\nHigh Current Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA\nHigh Current\n?;

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NPN TRANSISTOR

FEATURES: * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA

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WEITRON

Low Frequency Transistor

Features Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA

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KEXIN

科信電子

NPN Silicon General Purpose Transistor

FEATURES ? High Current. ? Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA) ? Complement of 2SC4738. Application ? General Purpose Amplification.

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