High-Frequency Medium-Output Amplifier Applications

High-Frequency Medium-Output Amplifier Applications Features ? High fT : (fT=3.5GHz typ). ? Large current : (IC=300mA). ? Large allowable collector dissipation (1.3W max).

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NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications

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High-Frequency Medium-Output Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features ? High fT : (fT=3.5GHz typ) ? Large current : (IC=300mA) ? Large allowable collector dissipation (1.3W max)

文件：82.02 Kbytes 頁數(shù)：4 Pages

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RF Transistor

Features ? High fT : (fT=3.5GHz typ) ? Large current : (IC=300mA) ? Large allowable collector dissipation (1.3W max)

文件：299.98 Kbytes 頁數(shù)：6 Pages

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安森美半導(dǎo)體

RF Transistor

Features ? High fT : (fT=3.5GHz typ) ? Large current : (IC=300mA) ? Large allowable collector dissipation (1.3W max)

文件：299.98 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

RF Transistor

Features ? High fT : (fT=3.5GHz typ) ? Large current : (IC=300mA) ? Large allowable collector dissipation (1.3W max)

文件：299.98 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

High-Frequency Medium-Output Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features ? High fT : (fT=3.5GHz typ) ? Large current : (IC=300mA) ? Large allowable collector dissipation (1.3W max)

文件：82.02 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

High-Frequency Medium-Output Amplifier Applications

文件：403.15 Kbytes 頁數(shù)：6 Pages

SANYO

三洋

High-Frequency Medium-Output Amplifier Applications

文件：403.15 Kbytes 頁數(shù)：6 Pages

SANYO

三洋

RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz

2SC5551A is RF Transistor, 30 V, 300 mA, fT = 3.5 GHz, NPN Single PCP for High-Frequency Medium-Output Amplifier Applications. ? High fT : (fT=3.5GHz typ)\n? Large current : (IC=300mA)\n? Large allowable collector dissipation (1.3W max);

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安森美半導(dǎo)體