| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES ? Low noise and high gain with low collector current ? NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz ? Maximum stable power gain: MSG 文件：300.27 Kbytes 頁數：12 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES ? Low noise and high gain with low collector current ? NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz ? Maximum stable power gain: MSG 文件：300.27 Kbytes 頁數：12 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES ? Low noise and high gain with low collector current ? NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA ? Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA ? fT = 25 GHz technology ? Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) 文件：91.73 Kbytes 頁數：12 Pages | NEC 瑞薩 | NEC | ||
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES ? Ideal for low-noise, high-gain amplification applications ? NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA ? Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V 文件：106.78 Kbytes 頁數：16 Pages | NEC 瑞薩 | NEC | ||
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES ? Ideal for low-noise, high-gain amplification applications ? NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ? Maximum available power gain: MAG = 19 文件：229.94 Kbytes 頁數：10 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES ? Ideal for low-noise, high-gain amplification applications ? NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ? Maximum available power gain: MAG = 19 文件：229.94 Kbytes 頁數：10 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES ? Ideal for low-noise, high-gain amplification applications ? NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ? Maximum available power gain: MAG = 19 文件：229.94 Kbytes 頁數：10 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES ? Ideal for low-noise, high-gain amplification applications ? NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA ? Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V 文件：106.78 Kbytes 頁數：16 Pages | NEC 瑞薩 | NEC | ||
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES ? Ideal for low-noise, high-gain amplification applications ? NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ? Maximum available power gain: MAG = 19 文件：229.94 Kbytes 頁數：10 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES ? Ideal for low-noise, high-gain amplification applications ? NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ? Maximum available power gain: MAG = 19 文件：229.94 Kbytes 頁數：10 Pages | RENESAS 瑞薩 | RENESAS |
技術參數
- BVCEO(V)：
33
- BVCBO(V)：
15
- IC(A)：
0.035
- HFE_MIN.：
50
- HFE_MAX.：
100
- HFE test_IC(mA)：
5
- HFE test_VCE(V)：
2.0
- ft? (GHz)_TYP：
25
- ft? (GHz)test_VCE：
3
- ft? (GHz)test_IC(mA)：
30
- ft? (GHz)test_f(GHz)：
2
- Package：
SOT-363
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
14+無鉛 |
SOT-343 |
25700 |
優(yōu)勢產品,博盛微熱賣!!! |
詢價 | ||
RENESAS |
26+ |
SOT-343 |
360000 |
進口原裝現貨 |
詢價 | ||
NEC |
16+ |
SOT-343 |
10000 |
進口原裝現貨/價格優(yōu)勢! |
詢價 | ||
NEC |
24+ |
SOT-343SOT-323-4 |
6205 |
新進庫存/原裝 |
詢價 | ||
NEC |
13+ |
NA |
19258 |
原裝分銷 |
詢價 | ||
NEC |
23+ |
SOT-343 |
30000 |
原裝正品,假一罰十 |
詢價 | ||
NEC |
24+ |
SOT416 |
3000 |
原裝現貨假一罰十 |
詢價 | ||
NEC |
17+ |
SOT-343 |
6200 |
100%原裝正品現貨 |
詢價 | ||
SOT-343 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
NEC |
1922+ |
SOT-343 |
35689 |
原裝進口現貨庫存專業(yè)工廠研究所配單供貨 |
詢價 |
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