Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

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PANASONIC

松下

Silicon NPN triple diffusion planar type

Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

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KEXIN

科信電子

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, DC-AC INVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications ? Excellent switching times: tr = 0.5 μs (max) tf = 0.3 μs (max) (IC = 0.4 A) ? High collector breakdown voltage: VCEO =

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TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications ? High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A) ? High collector breakdown voltage: VCEO = 400 V ? High DC current gain: hFE = 20 (min) (IC = 0.3 A)

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TOSHIBA

東芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 13(Min)@ IC= 1mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

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ISC

無錫固電

isc Silicon NPN Power Transistor

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ISC

無錫固電

High Speed Switching

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

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RENESAS

瑞薩