NPN EPITAXIAL SILICON TRANSISTOR

FEATURE ? High gain, low noise ? Small reverse transfer capacitance ? Can operate at low voltage

文件：2.36129 Mbytes 頁(yè)數(shù)：9 Pages

CEL

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE ? High gain, low noise ? Small reverse transfer capacitance ? Can operate at low voltage

文件：188.86 Kbytes 頁(yè)數(shù)：14 Pages

RENESAS

瑞薩

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE ? Ideal for medium-output applications ? High gain, low noise ? Small reverse transfer capacitance ? Can operate at low voltage

文件：189.36 Kbytes 頁(yè)數(shù)：14 Pages

RENESAS

瑞薩

NPN EPITAXIAL SILICON TRANSISTOR

FEATURE ? Ideal for medium-output applications ? High gain, low noise ? Small reverse transfer capacitance ? Can operate at low voltage

文件：1.79869 Mbytes 頁(yè)數(shù)：9 Pages

CEL

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE ? Ideal for medium-output applications ? High gain, low noise ? Small reverse transfer capacitance ? Can operate at low voltage

文件：79.36 Kbytes 頁(yè)數(shù)：12 Pages

NEC

瑞薩

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

文件：37.27 Kbytes 頁(yè)數(shù)：2 Pages

PANASONIC

松下

Silicon NPN triple diffusion planar type

Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

文件：40.41 Kbytes 頁(yè)數(shù)：1 Pages

KEXIN

科信電子

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, DC-AC INVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications ? Excellent switching times: tr = 0.5 μs (max) tf = 0.3 μs (max) (IC = 0.4 A) ? High collector breakdown voltage: VCEO =

文件：187.16 Kbytes 頁(yè)數(shù)：4 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁(yè)數(shù)：73 Pages

TOSHIBA

東芝

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications ? High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A) ? High collector breakdown voltage: VCEO = 400 V ? High DC current gain: hFE = 20 (min) (IC = 0.3 A)

文件：156.15 Kbytes 頁(yè)數(shù)：3 Pages

TOSHIBA

東芝