RF & Microwave device

文件：137.58 Kbytes 頁數(shù)：2 Pages

RENESAS

瑞薩

Package：TO-243AA；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 12V 6GHZ SOT89

CEL

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES ? High gain: ?S21e?2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz ? Low distortion, low voltage: IM2 = ?55 dB TYP., IM3 = ?76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBμV/75? ? 4-pin power

文件：186.52 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE= 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such. FEATURES ? High gain |S21 |2 = 10 dB TYP., @VCE= 5 V, I

文件：71.27 Kbytes 頁數(shù)：10 Pages

NEC

瑞薩