NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)

General Purpose Amplifier Applications Switching and Muting Switch Application ? Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA ? Large collector current: IC = 500 mA (max)

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TOSHIBA

東芝

Silicon NPN Epitaxial

Features ● Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA ● Large collector current: IC = 500 mA (max).

文件：41.6 Kbytes 頁數(shù)：2 Pages

KEXIN

科信電子

General Purpose Amplifier Applications

文件：137.69 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

Transistor for low frequency small-signal amplification

Feature：High current\nPolarity：NPN\nComplementary Product：2SA1953\nRoHS Compatible Product(s) (#)：Available Collector Current IC 0.5 A \nCollector-emitter voltage VCEO 12 V ;

Toshiba

東芝

General Purpose Amplifier Applications

文件：137.69 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 12V 0.5A SC59

Toshiba Semiconductor and Storage