HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

FEATURES ? Small Package ? High Gain Bandwidth Product (fT = 12 GHz TYP.) ? Low Noise, High Gain ? Low Voltage Operation

文件：51.41 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching ■ Features ● High collector to base voltage VCBO. ● High emitter to base voltage VEBO.

文件：36.49 Kbytes 頁數(shù)：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Silicon NPN epitaxial planer type For UHF band low-noise amplification ■ Features ● Low noise figure NF. ● High gain. ● High transition frequency fT. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：38.07 Kbytes 頁數(shù)：2 Pages

PANASONIC

松下

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

文件：241.06 Kbytes 頁數(shù)：12 Pages

RENESAS

瑞薩

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

文件：190.45 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

isc Silicon NPN Low Noise Bipolar Transistor

文件：272.65 Kbytes 頁數(shù)：3 Pages

ISC

無錫固電

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

文件：190.51 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

文件：190.31 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)

文件：182.73 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION\nThe 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pa ? Low Voltage Use.\n? High fT : 12.0 GHz TYP. (@ VCE= 3 V, IC= 10 mA, f = 2 GHz)\n? Low Cre : 0.4 pF TYP. (@ VCE= 3 V, IE= 0, f = 1 MHz)\n? Low NF : 1.5 dB TYP. (@ VCE= 3 V, IC= 3 mA, f = 2 GHz)\n? High |S21e|2: 8.5 dB TYP. (@ VCE= 3 V, IC= 10 mA, f = 2 GHz)\n? Ultra Super Mini Mold Package.;

Renesas

瑞薩