| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SC400 | Low Level and General Purpose Amplifiers 文件：84.74 Kbytes 頁數(shù)：1 Pages | MICRO-ELECTRONICS | MICRO-ELECTRONICS | |
NPN SILICON POWER TRANSISTOR DESCRIPTION The 2SC4001 is designed for use of high-resolution monitor TV applications. This makes it possible to raise the video band of high-resolution monitor TVs to 50 MHz. 文件：130.78 Kbytes 頁數(shù)：2 Pages | NEC 瑞薩 | NEC | ||
isc Silicon NPN Power Transistor DESCRIPTION ? The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. FEATURES ? Collector–Emitter Sustaining Voltage- : VCBO = 300 V(Min) ? Complement to Type 2SA1546 文件：189.9 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
High-Voltage Driver Applications??? High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. 文件：73.03 Kbytes 頁數(shù)：3 Pages | SANYO 三洋 | SANYO | ||
High-Voltage Driver Applications? High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. 文件：78.26 Kbytes 頁數(shù)：3 Pages | SANYO 三洋 | SANYO | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：299.53 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc Silicon NPN Power Transistor DESCRIPTION ? High hFE ? Low collector-to-emitter saturation voltage ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? High switching applications 文件：328.07 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | ||
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat) 文件：373.85 Kbytes 頁數(shù)：2 Pages | JIANGSU 長電科技 | JIANGSU | ||
NPN Triple Diffused Planar Silicon Transistor Features ● High breakdown voltage ● Adoption of MBIT process ● Excellent hFE linearity 文件：46.74 Kbytes 頁數(shù)：2 Pages | KEXIN 科信電子 | KEXIN | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：280.4 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
通用型 （Uni）
- 封裝形式：
直插封裝
- 極限工作電壓：
30V
- 最大電流允許值：
0.1A
- 最大工作頻率：
300MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BC108,BC172,BC183,BC208,BC238,BC383,BC548,BF583,2N2220,2N2221,2N2222,3DG120C,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
D-8
- vtest：
30
- htest：
300000000
- atest：
0.1
- wtest：
0
技術(shù)參數(shù)
- VCEO (V)：
250
- hFE min.：
60
- hFE max.：
320
- Pc (W)：
1
- Production Status：
EOL
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
T/NEC |
2023+ |
CAN |
50000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
24+ |
TI-220FA |
10000 |
全新 |
詢價(jià) | |||
NEC |
12+ |
TO-252 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
SANYO |
06+/05 |
SOT252 |
2600 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價(jià) | ||
NEC |
24+ |
8858 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) | |||
SANYO |
24+ |
TO-92 |
3000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SANYO |
24+ |
TO-252DPAK |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
SANYO |
07+ |
SOT252 |
574 |
全新原裝現(xiàn)貨曹小姐Q505546343微信a13032182425手機(jī)號同
|
詢價(jià) | ||
SANYO |
23+ |
NA |
1485 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià)，原裝元器件供應(yīng)，支持開發(fā)樣品 |
詢價(jià) | ||
SANYO |
23+ |
NA |
1086 |
專做原裝正品,假一罰百! |
詢價(jià) |
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