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首頁(yè) >2SC360>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
2SC3600	文件：116.99 Kbytes Page：4 Pages	high-Definition CRT Display Video Output Applications? Ultrahigh-Definition CRT Display Video Output Applications Features ? High fT : fT typ=400MHz. ? High breakdown voltage : VCEO≥200V. ? Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP). ? Complementary PNP and NPN types. ? Adoption of FBET process. 文件：116.99 Kbytes 頁(yè)數(shù)：4 Pages	SANYO 三洋	SANYO
2SC3601	文件：212.47 Kbytes Page：8 Pages	Ultrahigh-Definition CRT Display Video Output Applications? Ultrahigh-Definition CRT Display Video Output Applications Features · High fT: fTtyp=400MHz. · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.0pF (NPN), 2.5pF (PNP). · Complementary PNP and NPN types. · Adoption o 文件：212.47 Kbytes 頁(yè)數(shù)：8 Pages	SANYO 三洋	SANYO
2SC3603	文件：89.68 Kbytes Page：8 Pages	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. 文件：89.68 Kbytes 頁(yè)數(shù)：8 Pages	NEC 瑞薩	NEC
2SC3603	文件：214.51 Kbytes Page：10 Pages	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran 文件：214.51 Kbytes 頁(yè)數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
2SC3603	文件：222.25 Kbytes Page：4 Pages	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. 文件：222.25 Kbytes 頁(yè)數(shù)：4 Pages	ELEFLOW	ELEFLOW
2SC3604	文件：198.04 Kbytes Page：2 Pages	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES ? Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz ? High power gai 文件：198.04 Kbytes 頁(yè)數(shù)：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
2SC3604	文件：218.49 Kbytes Page：10 Pages	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran 文件：218.49 Kbytes 頁(yè)數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
2SC3604	文件：94.46 Kbytes Page：8 Pages	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES ? Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz ? High power gai 文件：94.46 Kbytes 頁(yè)數(shù)：8 Pages	NEC 瑞薩	NEC
2SC3605	文件：73.84 Kbytes Page：1 Pages	TRANSISTOR 3SK121 datasheet pdf 文件：73.84 Kbytes 頁(yè)數(shù)：1 Pages	TOSHIBA 東芝	TOSHIBA
2SC3605	文件：294.15 Kbytes Page：5 Pages	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS FEATURES: ● Low Noise Figure, High Gain ● NF = 1.1dB, \|S21e\|2 = 10dB (f = 1GHz) 文件：294.15 Kbytes 頁(yè)數(shù)：5 Pages	TOSHIBA 東芝	TOSHIBA

晶體管資料

型號(hào)：
2SC3604
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-NPN
性質(zhì)：
超高頻/特高頻（UHF）
封裝形式：
貼片封裝
極限工作電壓：
20V
最大電流允許值：
0.065A
最大工作頻率：
8GHZ
引腳數(shù)：
4
可代換的型號(hào)：
2SC3358,2SC3721,
最大耗散功率：
0.58W
放大倍數(shù)：
圖片代號(hào)：
G-129
vtest：
20
htest：
8000000000
atest：
0.065
wtest：
0.58

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	2SC3604	NEC	24+		200		詢價(jià)
深圳市佳鑫美電子科技有限公司	2SC3604	NEC	25+		2789	全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市振宏微科技有限公司	2SC3604	SMD	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	2SC3604	NEC	20+	SMT	49000	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
香港創(chuàng)芯邦電子有限公司	2SC3604	NEC	23+	十字架	305	現(xiàn)貨庫(kù)存	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	2SC3604	TOS	23+	TO	20000	正品原裝貨價(jià)格低	詢價(jià)
上海金慶電子技術(shù)有限公司	2SC3605	TOSHIBA	新		580	全新原裝貨期兩周	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	2SC3605	TOSHIBA/東芝	23+	TO-92	900000	原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳	詢價(jià)
深圳市弘為電子有限公司	2SC3606	TOS	24+	SOT-23	3000	原裝現(xiàn)貨假一罰十	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	2SC3606	TOSHIBA	23+	SOT-23	30000	原裝正品,假一罰十	詢價(jià)

更多2SC360供應(yīng)商更新時(shí)間2026-1-19 16:30:00

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