| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SC3355 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES ? Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 文件:102.15 Kbytes 頁數(shù):8 Pages | NEC 瑞薩 | NEC | |
2SC3355 | HIGH FREQUENCY LOW NOISE AMPLIFIER HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES * Low Noise and High Gain * High Power Gain 文件:107.61 Kbytes 頁數(shù):3 Pages | UTC 友順 | UTC | |
2SC3355 | NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES ? Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF 文件:248.21 Kbytes 頁數(shù):10 Pages | RENESAS 瑞薩 | RENESAS | |
2SC3355 | isc Silicon NPN RF Transistor DESCRIPTION ? Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ? High Power Gain MAG= 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ? Designe 文件:314.85 Kbytes 頁數(shù):6 Pages | ISC 無錫固電 | ISC | |
2SC3355 | Silicon NPN transistor in a TO-92 Plastic Package Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications. 文件:920.81 Kbytes 頁數(shù):6 Pages | FOSHAN 藍箭電子 | FOSHAN | |
2SC3355 | NPN Silicon Epitaxial Transistor ■ ABSTRACT The 2SC3355 is a silicon epitaxial transistor in NPN configuration. This high frequency, low noise amplifier boasts a high power gain. The transistor is encased in a compact three pin durable plastic TO-92 package. 文件:438.25 Kbytes 頁數(shù):1 Pages | AMMSEMI | AMMSEMI | |
2SC3355 | NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 文件:293.26 Kbytes 頁數(shù):10 Pages | RENESAS 瑞薩 | RENESAS | |
2SC3355 | HIGH FREQUENCY LOW NOISE AMPLIFIER 文件:82.99 Kbytes 頁數(shù):2 Pages | UTC 友順 | UTC | |
2SC3355 | RF Tranasitor | UTC 友順 | UTC | |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES ? Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF 文件:248.21 Kbytes 頁數(shù):10 Pages | RENESAS 瑞薩 | RENESAS |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質:
超高頻/特高頻 (UHF)
- 封裝形式:
直插封裝
- 極限工作電壓:
20V
- 最大電流允許值:
0.1A
- 最大工作頻率:
6.5GHZ
- 引腳數(shù):
3
- 可代換的型號:
2SC2671,2SC3512,
- 最大耗散功率:
0.6W
- 放大倍數(shù):
- 圖片代號:
A-21
- vtest:
20
- htest:
6500000000
- atest:
0.1
- wtest:
0.6
技術參數(shù)
- BVCEO(V):
12
- BVCBO(V):
20
- IC(A):
0.10
- HFE_MIN.:
50
- HFE_MAX.:
300
- HFE test_IC(mA):
20
- HFE test_VCE(V):
10.0
- ft? (GHz)_TYP:
7
- ft? (GHz)test_VCE:
10
- ft? (GHz)test_IC(mA):
20
- Package:
TO-92 SOT-89 SOT-323
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
2019 |
TO-92 |
19700 |
INFINEON品牌專業(yè)原裝優(yōu)質 |
詢價 | ||
NEC品牌 |
2021+ |
TO-92 |
6800 |
原廠原裝,歡迎咨詢 |
詢價 | ||
NEC |
2406+ |
SMD4 |
21230 |
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價 | ||
NEC |
13+ |
SMD4 |
22488 |
原裝分銷 |
詢價 | ||
NEC |
1215+ |
TO-92 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應. |
詢價 | ||
NEC |
23+ |
TO-92 |
7510 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
24+ |
210 |
詢價 | |||||
PLANETA |
24+ |
原廠封裝 |
65011 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
NEC |
23+ |
TO-92 |
30000 |
原裝正品,假一罰十 |
詢價 | ||
NEC |
TO-92 |
100000 |
現(xiàn)貨庫存 |
詢價 |
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