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          首頁 >2SC307>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SC3070

          High-hFE, Low-Frequency General-Purpose Amp Applications????

          High hFE, Low-Frequency General-Purpose Amplifier Applications Features ? High DC current gain (hFE=800 to 3200). ? Large current capacity (IC=1.2A). ? Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). ? High VEBO (VEBO≥15V). Applications ? Low-frequency, general-purp

          文件:80.27 Kbytes 頁數(shù):3 Pages

          SANYO

          三洋

          2SC3071

          High-hFE, Low-Frequency General-Purpose Amp Applications????

          High hFE, Low-Frequency General-Purpose Amplifier Applications Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low-frequency, general-p

          文件:83.28 Kbytes 頁數(shù):3 Pages

          SANYO

          三洋

          2SC3072

          TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

          Strobe Flash Applications Medium Power Amplifier Applications ? High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) ? Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) ? High power di

          文件:152.32 Kbytes 頁數(shù):3 Pages

          TOSHIBA

          東芝

          2SC3072

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁數(shù):73 Pages

          TOSHIBA

          東芝

          2SC3072

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:280.06 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SC3072

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:299.12 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SC3072

          Silicon NPN Epitaxial

          Features ? High DC current gain. ? Low collector saturation voltage. ? High power dissipation.

          文件:40.31 Kbytes 頁數(shù):1 Pages

          KEXIN

          科信電子

          2SC3072-251

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:299.12 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SC3072-252

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:280.06 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SC3073

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:299.69 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          晶體管資料

          • 型號:

            2SC3071

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            HI_UEB_HI_BETA

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            120V

          • 最大電流允許值:

            0.2A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

            2SD1211,

          • 最大耗散功率:

          • 放大倍數(shù):

            β>500

          • 圖片代號:

            A-20

          • vtest:

            120

          • htest:

            999900

          • atest:

            0.2

          • wtest:

            0

          供應商型號品牌批號封裝庫存備注價格
          SANYO
          24+
          TO-92L
          530
          詢價
          三洋
          25+
          TO-92
          11160
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          UTG
          24+
          SOT-89
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價
          TOS
          23+
          TO
          20000
          正品原裝貨價格低
          詢價
          SNAYO
          23+
          TO-92
          6500
          專注配單,只做原裝進口現(xiàn)貨
          詢價
          SNAYO
          22+
          TO-92
          20000
          公司只有原裝 品質(zhì)保證
          詢價
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          24+
          N/A
          64000
          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          詢價
          onsemi(安森美)
          25+
          -
          20948
          樣件支持,可原廠排單訂貨!
          詢價
          onsemi(安森美)
          25+
          -
          21000
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          更多2SC307供應商 更新時間2026-1-19 16:30:00
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