Silicon NPN Power Transistor

DESCRIPTION ? Low Collector Saturation Voltage ? Fast Switching Speed ? Complement to Type 2SA1010 APPLICATIONS ? Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power amplif

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low VCE(sat),fast switching speed, complementary pair with 2SA1010. Applications Use for high voltage high speed switching, for a drive in devices such as switching regulators, DC/DC converters, high frequency pow

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FOSHAN

藍(lán)箭電子

Silicon NPN Power Transistors

DESCRIPTION · With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in ind

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SAVANTIC

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features low collector saturation voltage, fast switching speed, wide base reverse-bias SOA. Applications High-speed high-voltage converters, and high-frequency power amplifiers.

文件：1.4563 Mbytes 頁數(shù)：6 Pages

FOSHAN

藍(lán)箭電子

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FE

文件：114.42 Kbytes 頁數(shù)：6 Pages

NEC

瑞薩

SWITCHMODE SERIES NPN POWER TRANSISTORS

文件：135.48 Kbytes 頁數(shù)：3 Pages

MOSPEC

統(tǒng)懋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in induct

文件：181.1 Kbytes 頁數(shù)：4 Pages

ISC

無錫固電

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in induc

文件：211.37 Kbytes 頁數(shù)：4 Pages

JMNIC

錦美電子

SWITCHMODE SERIES NPN POWER TRANSISTORS

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage,high-speed,pow?r switching in inductive circuit, they are particularly suited for 115 and 220 V switcmode applications such as switching regulators.inverters.DC -DC and converter FEATURES: ? Collector-Emittor Sustainin

文件：83.6 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power

文件：218.6 Kbytes 頁數(shù)：3 Pages

SAVANTIC