NPN Silicon Plastic-Encapsulate Transistor

Features ? Halogen free available upon request by adding suffix -HF ? Capable of 0.9Watts of Power Dissipation. ? Collector-current 1.0A ? Collector-base Voltage 160V ? Operating and storage junction temperature range: -55°C to +150°C ? Marking: C2383 ? Epoxy meets UL 94 V-0 flammability ra

文件：75.17 Kbytes 頁(yè)數(shù)：2 Pages

MCC

NPN Plastic Encapsulated Transistor

FEATURES ? Small Flat Package ? General Purpose Application

文件：77.25 Kbytes 頁(yè)數(shù)：1 Pages

SECOS

喜可士

NPN Transistors

■ Features ● Small Flat Package ● General Purpose Application

文件：473.32 Kbytes 頁(yè)數(shù)：2 Pages

YFWDIODE

佑風(fēng)微

High-voltage Amplifier Transistor(120V, 50mA)

Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.

文件：59.94 Kbytes 頁(yè)數(shù)：1 Pages

ROHM

羅姆

UHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES: -Output Power: Po=3W (Min.) (f=470MHz, Vcc=12.6V, Pi-0.4W) -100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=15V, P1=0.4W, f-470MHz

文件：60.63 Kbytes 頁(yè)數(shù)：2 Pages

TOSHIBA

東芝

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)

2~30 MHz SSB LINEAR POWER AMPLIFIER APPLICATION (LOW SUPPLY VOLTAGE USE)

文件：140.16 Kbytes 頁(yè)數(shù)：2 Pages

TOSHIBA

東芝

Silicon NPN Epitaxial

Application ? Low frequency amplifier ? Complementary pair with 2SA1025, 2SA1081 and 2SA1082

文件：24.93 Kbytes 頁(yè)數(shù)：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

文件：117.7 Kbytes 頁(yè)數(shù)：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：143.04 Kbytes 頁(yè)數(shù)：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：104.67 Kbytes 頁(yè)數(shù)：3 Pages

JMNIC

錦美電子