NPN Plastic Encapsulated Transistor

FEATURES ? Amplifier dissipation NPN Silicon

文件：257.19 Kbytes 頁數(shù)：2 Pages

SECOS

喜可士

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current ICM: 50 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：123.33 Kbytes 頁數(shù)：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92 Plastic Package

Description Silicon NPN transistor in a TO-92 Plastic Package. Features High gain, good hFE linearity. Features TV final picture IF amplifier applications.

文件：957.32 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子

Silicon NPN transistor in a SOT-23 Plastic Package

Description Silicon NPN transistor in a SOT-23 Plastic Package. Features High gain, good hFE linearity. Applications TV final picture IF amplifier applications.

文件：804.18 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

文件：550.89 Kbytes 頁數(shù)：12 Pages

NEC

瑞薩

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

文件：550.89 Kbytes 頁數(shù)：12 Pages

NEC

瑞薩

HIGH POWER SWITCHING APPLICATIONS.

FEATURES : High Voltage: VCEO 400V (Min.)(2SC2204) VCEO=300V (Min.) (2SC2220) VCBO-800V (Min.)(2SC2204) VCBO=500V (Min.)(2SC2220) High Speed Switching : tf=0.7us (Typ.)

文件：93.99 Kbytes 頁數(shù)：1 Pages

TOSHIBA

東芝

NPN SILICON EPITAXIAL TRANSISTOR

VHF Power Amplifier Industrial Use

文件：426.94 Kbytes 頁數(shù)：8 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

NPN SILICON EPITAXIAL TRANSISTOR

VHF Power Amplifier Industrial Use

文件：426.94 Kbytes 頁數(shù)：8 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

NPN General Purpose Switching Transistor

Voltage 40V Current 600mA Features ? NPN epitaxial Silicon, Planar Design ? Collector-emitter voltage VCE = 40V ? Collector current = 600mA ? Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) ? Green molding compound as per IEC61249 Std.. (Halogen Free)

文件：371.5 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂