| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1 文件：52.95 Kbytes 頁數(shù)：8 Pages | NEC 瑞薩 | NEC | ||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1 文件：180.43 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS | ||
SILICON TRANSISTR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1 文件：133.4 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
SILICON TRANSISTR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1 文件：133.4 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1 文件：180.43 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS | ||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1 文件：52.95 Kbytes 頁數(shù)：8 Pages | NEC 瑞薩 | NEC | ||
NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)? DESCRIPTION 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. APPLICATION 3 to 4 watts output power amplifiers in HF band mobile radio applications. 文件：130.19 Kbytes 頁數(shù)：3 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
Silicon NPN Transistor Final RF Power Output Silicon NPN Power Transistor Final RF Power Output The 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. APPLICATION 3 to 4 Watt Output Power Class AB Amplifiers in HF Band 文件：92.74 Kbytes 頁數(shù)：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
High Reliability DESCRIPTION ? High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ? High Reliability APPLICATIONS ? Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. 文件：187.59 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability APPLICATIONS ·Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. 文件：43.12 Kbytes 頁數(shù)：2 Pages | JMNIC 錦美電子 | JMNIC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
射頻/高頻放大 （HF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
75V
- 最大電流允許值：
4A
- 最大工作頻率：
27MHZ
- 引腳數(shù)：
3
- 可代換的型號：
2SC1944,2SC1969,2SC2043,2SC2098,2SC2119,3DA22B,
- 最大耗散功率：
6W
- 放大倍數(shù)：
- 圖片代號：
B-10
- vtest：
75
- htest：
27000000
- atest：
4
- wtest：
6.0001
技術(shù)參數(shù)
- Output Power：
7.5(Typ)W
- Number of Elements per Chip：
1
- Minimum DC Current Gain：
- Maximum Operating Temperature：
150°C
- Maximum Emitter Base Voltage：
5V
- Maximum DC Collector Current：
4A
- Maximum Collector Emitter Voltage：
75V
- Maximum Collector Base Voltage：
75V
- Configuration：
Single
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MITSBISHI |
23+ |
1688 |
房間現(xiàn)貨庫存:QQ:373621633 |
詢價(jià) | |||
MITSUBIS |
23+ |
TO-220 |
650 |
專營高頻管模塊,全新原裝! |
詢價(jià) | ||
MIT |
24+ |
原廠封裝 |
2500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
FAIRCHILD |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
3000 |
24+ |
30000 |
詢價(jià) | ||||
三菱 |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
三菱 |
24+/25+ |
TO220 |
2995 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | ||
MITSBISHI |
24+ |
TO-220 |
166 |
現(xiàn)貨供應(yīng) |
詢價(jià) | ||
MITSUBISH三凌 |
20+ |
TO-220 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
MITSUBISHI/三菱 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價(jià)格優(yōu)勢 |
詢價(jià) |
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