| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)? 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 文件：132.77 Kbytes 頁(yè)數(shù)：3 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)? DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band. 文件：130.5 Kbytes 頁(yè)數(shù)：3 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band. 文件：240.96 Kbytes 頁(yè)數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications. 文件：252.27 Kbytes 頁(yè)數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1946Ais Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. FEATURES INCLUDE: ? High Common Emitter Power Gain ? Output Power = 30 W 文件：35.12 Kbytes 頁(yè)數(shù)：1 Pages | ASI | ASI | ||
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)? DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications. 文件：135.17 Kbytes 頁(yè)數(shù)：3 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)? DESCRIPTION 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10.7dB @VCC = 13.5V, PO = 3.5W, f = 175MHz ● TO-39 metal seeled package for high reliability. ● Em 文件：126.18 Kbytes 頁(yè)數(shù)：3 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
HIGH POWER TRANSISTOR SILICON NPN HIGH POWER TRANSISTOR SILICON NPN 文件：88.92 Kbytes 頁(yè)數(shù)：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification 文件：118.27 Kbytes 頁(yè)數(shù)：4 Pages | SAVANTIC | SAVANTIC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification 文件：134.57 Kbytes 頁(yè)數(shù)：4 Pages | ISC 無(wú)錫固電 | ISC |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MIT |
25+ |
TO-220 |
6890 |
全新原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
MITSUBISHI |
24+ |
TO220 |
2148 |
詢價(jià) | |||
MITSUBIS |
23+ |
TO-220 |
950 |
專營(yíng)高頻管模塊,全新原裝! |
詢價(jià) | ||
MIT |
24+ |
原廠封裝 |
1400 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
1215+ |
T0-220 |
150000 |
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng). |
詢價(jià) | |||
MITSUBISHI |
16+ |
TO-220F |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
MIT |
24+ |
TO-220 |
2500 |
全新原裝環(huán)保現(xiàn)貨 |
詢價(jià) | ||
MITSUBI |
17+ |
TO220 |
60000 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
MITSUBISHI/三菱 |
24+ |
TO220 |
40 |
絕對(duì)原廠原裝,長(zhǎng)期優(yōu)勢(shì)可定貨 |
詢價(jià) | ||
MITSUBIS |
23+ |
TO-220 |
3000 |
原裝正品假一罰百!可開增票! |
詢價(jià) |
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- FU-311SPP-CV3
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- FU-630SLD-14M2
- FU-641SEA-1MX
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