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          首頁 >2SB16>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SB1631

          Silicon PNP epitaxial planar type(For power amplification)

          Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping

          文件:52.91 Kbytes 頁數(shù):3 Pages

          PANASONIC

          松下

          2SB1638

          Silicon PNP epitaxial planar type(For low-voltage switching)

          Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma

          文件:58.96 Kbytes 頁數(shù):3 Pages

          PANASONIC

          松下

          2SB1638

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:300.34 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB1638

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:281.29 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB1638-251

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:300.34 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB1638-252

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:281.29 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB1638A

          Silicon PNP epitaxial planar type(For low-voltage switching)

          Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma

          文件:58.96 Kbytes 頁數(shù):3 Pages

          PANASONIC

          松下

          2SB1639

          High-current gain Power Transistor (-60V, -3A)

          2SB1639 ( -60V, -3A) 2SD2318, 2SD1944 (60V, 3A) High DC current gain.

          文件:29.92 Kbytes 頁數(shù):1 Pages

          ROHM

          羅姆

          2SB1640

          Silicon PNP Power Transistors

          DESCRIPTION ? With ITO-220 package ? Low collector saturation voltage ? Complement to type 2SD2525 APPLICATIONS ? Audio frequency power amplifier

          文件:128.33 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SB1640

          TOSHIBA Transistor Silicon PNP Triple Diffused Type

          Audio Frequency Power Amplifier ? Low saturation voltage: VCE (sat) = ?1.5 V (max) (IC = ?2 A, IB = ?0.2 A) ? Collector metal (fin) is covered with mold region. ? Complementary to 2SD2525

          文件:138.11 Kbytes 頁數(shù):4 Pages

          TOSHIBA

          東芝

          技術(shù)參數(shù)

          • NPN/PNP:

            PNP

          • Vcbo (V):

            -30

          • VCEO (V):

            -30

          • Vebo (V):

            -6

          • IC (A) @25 °C:

            -5

          • VCE(sat) (V) max.:

            -0.5

          • hFE min.:

            150

          • hFE max.:

            600

          • fT (MHz) typ.:

            95

          • Cob (pF) typ.:

            100

          • Package Type:

            MP-5

          • Production Status:

            EOL announced

          供應(yīng)商型號品牌批號封裝庫存備注價格
          NEC進(jìn)口
          1215+
          TO-126
          150000
          全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
          詢價
          NEC
          24+
          8858
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
          詢價
          NEC
          25+
          TO-126
          2987
          只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電
          詢價
          長電
          25+23+
          TO-126
          24577
          絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價
          NEC
          18+
          TO-126
          85600
          保證進(jìn)口原裝可開17%增值稅發(fā)票
          詢價
          CJ
          20+
          TO252
          32970
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          NEC
          24+
          6540
          原裝現(xiàn)貨/歡迎來電咨詢
          詢價
          CJ/長電
          21+
          TO-126
          30000
          百域芯優(yōu)勢 實單必成 可開13點(diǎn)增值稅發(fā)票
          詢價
          HGF/恒光發(fā)
          23+
          TO-126
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          NEC
          25+
          TO-126
          8880
          原裝認(rèn)準(zhǔn)芯澤盛世!
          詢價
          更多2SB16供應(yīng)商 更新時間2026-1-20 11:03:00
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