| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc Silicon PNP Darlington Power Transistor DESCRIPTION ? High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ? Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ? Complement to Type 2SD2401 ? Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS ? Designed for audi 文件：268.92 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application : Audio, Series Regulator and General Purpose 文件：24.99 Kbytes 頁數(shù)：1 Pages | SANKEN 三墾 | SANKEN | ||
Silicon PNP Epitaxial Planar ■ Features ● Low collector-emitter saturation voltage ● Complementary to 2SD2402 文件：52.95 Kbytes 頁數(shù)：2 Pages | KEXIN 科信電子 | KEXIN | ||
PNP SILICON EPITAXIAL TRANSISTOR FEATURES ? Low VCE(sat): VCE(sat)1 ≤ ?0.35 V ? Complementary to 2SD2402 文件：41.68 Kbytes 頁數(shù)：4 Pages | NEC 瑞薩 | NEC | ||
PNP SILICON EPITAXIAL TRANSISTOR FEATURES ? Low VCE(sat): VCE(sat)1 ≤ ?0.4 V ? Complementary to 2SD2403 文件：43.73 Kbytes 頁數(shù)：4 Pages | NEC 瑞薩 | NEC | ||
Silicon PNP Epitaxial Planar ■ Features ● Low collector-emitter saturation voltage ● Complementary to 2SD2403 文件：53.97 Kbytes 頁數(shù)：2 Pages | KEXIN 科信電子 | KEXIN | ||
Silicon PNP Epitaxial Planar Type Features Possible to tsolder radiation fin directly to printed circuit boad. Type with universal characteristics. High collector-base voltage (Emitter open) VCBO. High collector-emitter voltage (Base open) VCEO. Large collector current IC. 文件：39.49 Kbytes 頁數(shù)：1 Pages | KEXIN 科信電子 | KEXIN | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：299 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：279.95 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP epitaxial planar type(For low-frequency output amplification) For low-frequency output amplification ■ Features ● Possible to solder radiation fin directly to printed cicuit boad ● Type with universal characteristics ● Collector breakdown voltage: VCBO/VCEO = –50V ● Collector current: IC = –2A 文件：28.17 Kbytes 頁數(shù)：1 Pages | PANASONIC 松下 | PANASONIC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
表面帖裝型 （SMD）_開關(guān)管 （S）
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
5A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
2SB1571,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
H-100
- vtest：
60
- htest：
999900
- atest：
5
- wtest：
0
技術(shù)參數(shù)
- NPN/PNP：
PNP
- VCEO (V)：
-60
- Automotive：
YES
- IC (A) @25 °C：
-5
- VCE(sat) (V) max.：
-0.3
- hFE min.：
100
- hFE max.：
400
- Pc (W)：
2
- Package Type：
MP-2
- Production Status：
EOL
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
14+無鉛 |
SOT-89 |
25700 |
優(yōu)勢產(chǎn)品,博盛微熱賣!!! |
詢價 | ||
RENESAS/瑞薩 |
20+ |
SOT-89 |
120000 |
原裝正品 可含稅交易 |
詢價 | ||
RENESAS/瑞薩 |
2025+ |
SOT-89 |
5000 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
NEC |
24+ |
SMD |
7000 |
新進庫存/原裝 |
詢價 | ||
NEC |
25+ |
SOT89 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電 |
詢價 | ||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
NEC |
1922+ |
NA |
35689 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
NEC |
22+ |
SOT223 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
NEC |
23+ |
SOT223 |
4000 |
正品原裝貨價格低 |
詢價 | ||
NEC |
2023+ |
SOT-89 |
50000 |
原裝現(xiàn)貨 |
詢價 |
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