| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon PNP Power Transistors DESCRIPTION ? With TO-220C package ? High DC current gain ? DARLINGTON APPLICATIONS ? For medium speed and power switching applications 文件：88.92 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-220Fa package ? High DC current gain ? DARLINGTON APPLICATIONS ? For medium speed and power switching applications 文件：119.24 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ? High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS ? Designed for power amplifier applications. 文件：242.62 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
絲印：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) 文件：91.07 Kbytes 頁數(shù)：1 Pages | ROHM 羅姆 | ROHM | ||
Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= -8OV(Min) ? High DC Current Gain- ? Built-in resistor between base and emitter ? Built-in damper diode APPLICATIONS ? Designed for power amplifier applications. 文件：129.55 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Allowing automatic insertion with radial taping 文件：52.74 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing automatic insertion with radial taping 文件：54.62 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) POWER AMPLIFIER APPLICATIONS ? High Breakdown Voltage : VCEO = -140V (Min) ? Complementary to 2SD2384 文件：138.37 Kbytes 頁數(shù)：2 Pages | TOSHIBA 東芝 | TOSHIBA | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications 文件：245.53 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ? High DC Current Gain- : hFE= 5000(Min)@IC= -7A ? Complement to Type 2SD2385 APPLICATIONS ? Designed for power amplifier applications 文件：245.53 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
表面帖裝型 （SMD）_開關管 （S）
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
5A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
2SB1571,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
H-100
- vtest：
60
- htest：
999900
- atest：
5
- wtest：
0
技術參數(shù)
- NPN/PNP：
PNP
- VCEO (V)：
-60
- Automotive：
YES
- IC (A) @25 °C：
-5
- VCE(sat) (V) max.：
-0.3
- hFE min.：
100
- hFE max.：
400
- Pc (W)：
2
- Package Type：
MP-2
- Production Status：
EOL
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
14+無鉛 |
SOT-89 |
25700 |
優(yōu)勢產(chǎn)品,博盛微熱賣!!! |
詢價 | ||
RENESAS/瑞薩 |
20+ |
SOT-89 |
120000 |
原裝正品 可含稅交易 |
詢價 | ||
RENESAS/瑞薩 |
2025+ |
SOT-89 |
5000 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
NEC |
24+ |
SMD |
7000 |
新進庫存/原裝 |
詢價 | ||
NEC |
25+ |
SOT89 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電 |
詢價 | ||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
NEC |
1922+ |
NA |
35689 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
NEC |
22+ |
SOT223 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
NEC |
23+ |
SOT223 |
4000 |
正品原裝貨價格低 |
詢價 | ||
NEC |
2023+ |
SOT-89 |
50000 |
原裝現(xiàn)貨 |
詢價 |
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