LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

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UTC

友順

Epitaxial Planar PNP Transistors

Epitaxial Planar PNP Transistors P/b Lead(Pb)-Free

文件：254.94 Kbytes 頁(yè)數(shù)：4 Pages

WEITRON

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = ?0.2V (Typ.) (IC/IB = ?2A / ?0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

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ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/ae/marking.html">AE*；Package：SOT-89；Low VCE(sat) Transistor

FEATURES ● Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ● Excellent DC current gain characterisitics. ● Complementary the 2SD2150. APPLICATIONS ● This device is designed as a general purpose amplifier and switching.

文件：187.19 Kbytes 頁(yè)數(shù)：4 Pages

BILIN

銀河微電

TRANSISTOR(PNP)

FEATURES ● Excellent DC Current Gain ● Low Collector-emitter saturation voltage ● Complement the 2SD2150

文件：260.769 Kbytes 頁(yè)數(shù)：1 Pages

HTSEMI

金譽(yù)半導(dǎo)體

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

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JIANGSU

長(zhǎng)電科技

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics. Applications General purpose amplifier.

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FOSHAN

藍(lán)箭電子

PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

文件：629.64 Kbytes 頁(yè)數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

Plastic-Encapsulate Transistors

FEATURES ? Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ? Excellent DC current gain characterisitics. ? Complementary the 2SD2150.

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HOTTECH

合科泰

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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TEL