PNP Silicon Epitaxial Transistors

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MCC

TO-252-2L Plastic-Encapsulate Transistors

文件：918.32 Kbytes 頁數(shù)：4 Pages

JIANGSU

長電科技

Silicon PNP transistor in a TO-252 Plastic Package.

文件：866.8 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. ? High hFE hFE = 100 to 400\n? Low VCE(sat) VCE(sat) ≤ 0.3 V;

Renesas

瑞薩

晶體管

JSCJ

長晶科技

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.03 Kbytes 頁數(shù)：1 Pages

TEL

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc Silicon PNP Power Transistors

DESCRIPTION ? Low Collector Saturation Voltage ? High Power Dissipation- : PC= 10W(Max)@TC=25℃ ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for use in audio amplifier and switching, especially in hybrid integrated cir

文件：273.9 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

PNP Silicon Epitaxial Transistor

■ Features ● High hFE hFE = 100 to 400 ● Low VCE(sat) VCE(sat) ≤ 0.3 V

文件：41.81 Kbytes 頁數(shù)：2 Pages

KEXIN

科信電子

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES ? High hFEhFE= 100 to 400 ? Low VCE(sat) VCE(sat) ≤0.3 V

文件：295.69 Kbytes 頁數(shù)：6 Pages

NEC

瑞薩

絲印：IPAK；Package：TO-251；isc Silicon PNP Power Transistors

文件：271.87 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電