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          首頁 >2SB114>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SB1144

          isc Silicon PNP Power Transistor

          DESCRIPTION ?·Low Collector Saturation Voltage : VCE(sat)= -0.3V(Max)@IC= -0.5A ? Wide Area of Safe Operation ? Complement to Type 2SD1684 APPLICATIONS ? Designed for 100V/1.5A Switching Applications

          文件:149.91 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB1145

          Silicon PNP Power Transistors

          DESCRIPTION ? With TO-220F package ? High DC current gain. ? DARLINGTON ? Low collector saturation voltage APPLICATIONS ? For high current driver and power driver applications

          文件:151.53 Kbytes 頁數(shù):3 Pages

          JMNIC

          錦美電子

          2SB1145

          Silicon PNP Power Transistors

          DESCRIPTION ? With TO-220F package ? High DC current gain. ? DARLINGTON ? Low collector saturation voltage APPLICATIONS ? For high current driver and power driver applications

          文件:203.05 Kbytes 頁數(shù):3 Pages

          SAVANTIC

          2SB1145

          Silicon PNP Power Transistors

          DESCRIPTION ? With TO-220F package ? High DC current gain. ? DARLINGTON ? Low collector saturation voltage APPLICATIONS ? For high current driver and power driver applications

          文件:128.06 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SB1148

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -3A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:300.56 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB1148

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -3A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:281.5 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB1148

          Silicon PNP epitaxial planar type(For low-voltage switching)

          For low-voltage switching Complementary to 2SD1752 and 2SD1752A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

          文件:59.19 Kbytes 頁數(shù):3 Pages

          PANASONIC

          松下

          2SB1148-251

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -3A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:300.56 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB1148-252

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -3A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:281.5 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB1148A

          Silicon PNP epitaxial planar type(For low-voltage switching)

          For low-voltage switching Complementary to 2SD1752 and 2SD1752A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

          文件:59.19 Kbytes 頁數(shù):3 Pages

          PANASONIC

          松下

          晶體管資料

          • 型號:

            2SB1143

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-PNP

          • 性質(zhì):

            低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            60V

          • 最大電流允許值:

            4A

          • 最大工作頻率:

            150MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            BD188,BD440,BD786,2SB944,2SB986,2SB1151,

          • 最大耗散功率:

            10W

          • 放大倍數(shù):

          • 圖片代號:

            B-21

          • vtest:

            60

          • htest:

            150000000

          • atest:

            4

          • wtest:

            10

          詳細參數(shù)

          • 型號:

            2SB114

          • 制造商:

            SANYO Semiconductor Co Ltd

          • 功能描述:

            4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126

          供應(yīng)商型號品牌批號封裝庫存備注價格
          HITACHI/日立
          24+
          TO-126F
          158351
          明嘉萊只做原裝正品現(xiàn)貨
          詢價
          24+
          90000
          詢價
          SAN
          24+
          原廠封裝
          3500
          原裝現(xiàn)貨假一罰十
          詢價
          TOSH
          24+/25+
          2400
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          HITACHI/日立
          23+
          TO-126F
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          HITACHI
          22+
          TO-126F
          6000
          十年配單,只做原裝
          詢價
          23+
          TO
          20000
          正品原裝貨價格低
          詢價
          HIT
          23+
          7
          5000
          專注配單,只做原裝進口現(xiàn)貨
          詢價
          ON
          22+
          TO-220-3
          50000
          原裝正品假一罰十,代理渠道價格優(yōu)
          詢價
          ONSemiconductor
          24+
          NA
          3000
          進口原裝正品優(yōu)勢供應(yīng)
          詢價
          更多2SB114供應(yīng)商 更新時間2026-1-21 9:32:00
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