| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon PNP Epitaxial Planar Type Features ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current ICP ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 文件：50.6 Kbytes 頁數(shù)：1 Pages | KEXIN 科信電子 | KEXIN | ||
絲?。?a target="_blank" title="Marking" href="/iq/marking.html">IQ；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC 文件：1.44923 Mbytes 頁數(shù)：3 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
Low collector-emitter saturation voltage VCE(sat) FEATURES ? Low collector-emitter saturation voltage VCE(sat) ? Large peak collector current IC 文件：102.04 Kbytes 頁數(shù)：2 Pages | MAKOSEMI 美科半導(dǎo)體 | MAKOSEMI | ||
SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Large peak collector current IC ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H 文件：318.63 Kbytes 頁數(shù)：1 Pages | WILLAS 威倫電子 | WILLAS | ||
Plastic-Encapsulate Transistors FEATURES ? Low collector-emitter saturation voltage VCE(sat) ? Large peak collector current IC 文件：173.11 Kbytes 頁數(shù)：2 Pages | HOTTECH 合科泰 | HOTTECH | ||
Silicon PNP Power Transistor DESCRIPTION ? High Collector Current -lc= -2A ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ? Good Linearity of hFE ? Low Collector Saturation Voltage :VCE(sat)=-1.0V(Max.)@lc=-3A APPLICATIONS ? Designed for AF output amplifier applications. 文件：127.58 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-126 package ? High collector-peak current ? Low collector saturation voltage APPLICATIONS ? For audio frequency output amplifier applications 文件：104.82 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-126 package ? High collector-peak current ? Low collector saturation voltage APPLICATIONS ? For audio frequency output amplifier applications 文件：134.63 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-126 package ? High collector-peak current ? Low collector saturation voltage APPLICATIONS ? For audio frequency output amplifier applications 文件：160.15 Kbytes 頁數(shù)：3 Pages | JMNIC 錦美電子 | JMNIC | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ? Silicon NPN triple diffused ? Low Collector-Emitter Saturation Voltage ? Complement to Type 2SD1558 ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for low frequency power amplifier 文件：257.3 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
100V
- 最大電流允許值：
4A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
20W
- 放大倍數(shù)：
β=3000
- 圖片代號：
H-65
- vtest：
100
- htest：
999900
- atest：
4
- wtest：
20
詳細參數(shù)
- 型號：
2SB107
- 制造商：
HITACHI
- 制造商全稱：
Hitachi Semiconductor
- 功能描述：
Silicon PNP Triple Diffused
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
RENESAS瑞薩/HITACHI日立 |
24+ |
TO-252 |
6700 |
新進庫存/原裝 |
詢價 | ||
HITACHI |
24+ |
TO-251 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
AO |
23+ |
TO263 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
HITACHI |
22+ |
TO-251 |
6000 |
十年配單,只做原裝 |
詢價 | ||
RENESAS/瑞薩 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
HITACHI |
2023+環(huán)?，F(xiàn)貨 |
TO-252 |
18000 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價 | ||
RENESAS |
23+ |
SOT-252 |
4000 |
正品原裝貨價格低 |
詢價 | ||
HITACHI |
2023+ |
TO-252 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
NEC |
23+ |
SOT252 |
9000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
原廠原裝 |
ROHS |
13352 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 |
相關(guān)規(guī)格書
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