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          首頁 >2SA22>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SA2207

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:276.35 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          2SA2207

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:295.39 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          2SA2207

          PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications

          Features ? Adoption of MBIT processes. ? Large current capacitance. ? Low collector-to-emitter saturation voltage. ? High-speed switching. Applications ? High-speed switching applications (switching regulators, drive circuit).

          文件:59.42 Kbytes 頁數:4 Pages

          SANYO

          三洋

          2SA2207-251

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:295.39 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          2SA2207-252

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:276.35 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          2SA2209

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:276.06 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          2SA2209

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:295.1 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          2SA2209

          PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching

          Features ? Adoption of MBIT processes. ? Large current capacitance. ? Low collector-to-emitter saturation voltage. ? High-speed switching. Applications ? High-speed switching applications (switching regulator, driver circuit).

          文件:60.2 Kbytes 頁數:4 Pages

          SANYO

          三洋

          2SA2209-251

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:295.1 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          2SA2209-252

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:276.06 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          產品屬性

          • 產品編號:

            2SA2210

          • 制造商:

            onsemi

          • 類別:

            分立半導體產品 > 晶體管 - 雙極性晶體管(BJT)- 單個

          • 包裝:

            散裝

          • 晶體管類型:

            PNP

          • 不同?Ib、Ic 時?Vce 飽和壓降(最大值):

            500mV @ 350mA,7A

          • 電流 - 集電極截止(最大值):

            10μA(ICBO)

          • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

            150 @ 1A,2V

          • 頻率 - 躍遷:

            140MHz

          • 工作溫度:

            150°C(TJ)

          • 安裝類型:

            通孔

          • 封裝/外殼:

            TO-220-3 整包

          • 供應商器件封裝:

            TO-220F-3SG

          • 描述:

            TRANS PNP 50V 20A TO220F-3SG

          供應商型號品牌批號封裝庫存備注價格
          SANYO/三洋
          25+
          TO-220F
          45000
          SANYO/三洋全新現(xiàn)貨2SA2210即刻詢購立享優(yōu)惠#長期有排單訂
          詢價
          onsemi
          25+
          TO-220F-3SG
          22412
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          SANYO
          TO220F
          32165
          詢價
          ON
          23+
          TO-220F
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          三年內
          1983
          只做原裝正品
          詢價
          ON(安森美)
          23+
          NA
          20094
          正納10年以上分銷經驗原裝進口正品做服務做口碑有支持
          詢價
          ON/安森美
          22+
          TO-220
          6000
          十年配單,只做原裝
          詢價
          ON Semiconductor
          2022+
          TO-220F-3SG
          38550
          全新原裝 支持表配單 中國著名電子元器件獨立分銷
          詢價
          ON/安森美
          2406+
          TO-220
          36880
          誠信經營!進口原裝!量大價優(yōu)!
          詢價
          onsemi
          25+
          TO-220-3 整包
          9350
          獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
          詢價
          更多2SA22供應商 更新時間2026-1-19 11:17:00
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