Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 ■ Features ? Low collector-emitter saturation voltage VCE(sat) ? High collector-emitter voltage (Base open) VCEO ? Mini power type package, allowing downsizing of the equipment and automatic ins

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PANASONIC

松下

Silicon PNP Epitaxial Planar

Features ● Low collector-emitter saturation voltage VCE(sat) ● High collector-emitter voltage (Base open) VCEO

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KEXIN

科信電子

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications ? Low collector-emitter saturation voltage: VCE (sat) = ?0.5 V (max) (IC = ?1 A) ? High collector power dissipation: PC = 1.3 W (Ta = 25 °C) ? High-speed switching time

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TOSHIBA

東芝

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications ? Low collector-emitter saturation voltage: VCE (sat) = ?0.5 V (max) (IC = ?1 A, IB = ?0.05 A) ? High collector power dissipation: PC = 1.3 W ? High-speed switching tim

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TOSHIBA

東芝

TRANSISTOR (STOROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Audio Power Amplifier Applications ? hFE(1) = 100 to 320 (VCE = ?2 V, IC = ?0.5 A) ? hFE(2) = 70 (min) (VCE = ?2 V, IC = ?4 A) ? Low saturation voltage: VCE (sat) = ?1.0 V (max) (IC = ?4 V, IB = ?0.1 A) ? High-power dissipation: PC = 1.3 W

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TOSHIBA

東芝

DC/DC Converter, Motor Driver Applications

DC/DC Converter, Motor Driver Applications Features ? Adoption of FBET processes. ? Large current capacity. ? Low collector-to-emitter saturation voltage. ? Small size making it easy to provide high-density, small-sized hybrid ICs.

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SANYO

三洋

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES ? High current capacitance ? Low collector saturation voltage and high hFE ? Insulatio

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NEC

瑞薩

SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed.

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RENESAS

瑞薩

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES ? High current capacitance ? Low collector saturation voltage and high hFE ? Insulatio

文件：107.22 Kbytes 頁數(shù)：6 Pages

NEC

瑞薩

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES ? High current capacitance ? Low collector saturation voltage and high hFE ? Insulatio

文件：107.22 Kbytes 頁數(shù)：6 Pages

NEC

瑞薩