Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)

DESCRIPTION ? Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ? High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) ? Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS ? This type of power transistor is developed for high-speed

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ISC

無錫固電

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V, IC= -3A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A

文件：322.52 Kbytes 頁數(shù)：3 Pages

ISC

無錫固電

Silicon PNP Power Transistor

DESCRIPTION ? Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ? High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) ? Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS ? This type of power transistor is developed for high-speed

文件：140.93 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

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NEC

瑞薩

SILICON POWER TRANSISTOR

文件：269.32 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1744 is a power transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded ? High hFE and low VCE(sat): hFE ≥ 100 (VCE = ?2 V, IC = ?3 A) VCE(sat) ≤ 0.3 V (IC = ?8 A, IB = ?0.4 A)\n? Full-mold package that does not require an insulating board or bushing;

Renesas

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Trans GP BJT PNP 60V 15A Automotive 3-Pin(3+Tab) TO-220 Isolated

NJS

BJT 雙極性三極管

SPTECH

質(zhì)超微

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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RENESAS

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