EPITAXIAL PLANAR SUPER / ULTRA MINI MOLD PNP SILICON TRANSISTORS

Features 1) Low noise : NF = 0.5dB (Typ.) 2) Complementary pair with 2SC2412K/2SC4081.

文件：116.02 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

PNP silicon Transistor

Features ● Low noise:NF=0.5dB(TYP.) ● Epitaxial planar type.

文件：46.17 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

General Purpose Amplification Transistor

指正在申請中止制造的產(chǎn)品。

ROHM

羅姆

晶體三極管

TWTLsemi

騰領(lǐng)

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 200 mW (Tamb=25℃) Collector current ICM : -150 mA Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：68.91 Kbytes 頁數(shù)：1 Pages

TEL

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent hFE linearity ● Complements the 2SC4081

文件：870.48 Kbytes 頁數(shù)：4 Pages

JIANGSU

長電科技

General Purpose Transistor

Features ● Excellent hFE linearity.

文件：46.24 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/fq/marking.html">FQ；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Excellent HFE Linearity. ● Complements the 2SC4081. APPLICATIONS ● General purpose application. ● Switching and amplification.

文件：153.07 Kbytes 頁數(shù)：3 Pages

BILIN

銀河微電

PNP Silicon Epitaxial Planar Transistor

DESCRIPTION The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. FEATURES ● Complements of the 2SC4081 ● Excellent hFE Linearity

文件：381.93 Kbytes 頁數(shù)：3 Pages

SECOS

喜可士

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 200 mW (Tamb=25℃) Collector current ICM : -150 mA Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：137.15 Kbytes 頁數(shù)：1 Pages

WINNERJOIN

永而佳